Enhance Silicon-Nitride Formation Through Ammonolysis of Silanes with Pseudo-halide Substituents

Anil Kumar Tummanapelli,Yingqian Chen,Ming Wah Wong
DOI: https://doi.org/10.1039/d3cp05677e
IF: 3.3
2024-01-08
Physical Chemistry Chemical Physics
Abstract:Considering challenges in reactivity, potential contamination, and substrate selectivity, the ammonolysis of traditional halosilanes in silicon nitride (SiN) thin film processing motivates the exploration of alternative precursors. In this pioneering study, we employed density functional theory calculations at M06-2X/6-311++G(3df,2p) level to comprehensively screen potential pseudohalide substituents on silane compounds as substitutes for conventional halosilanes. Initially, we investigated the ammonolysis mechanism of halosilanes, exploring factors influencing activation barriers, with the aid of frontier molecular orbital and charge density analysis. Subsequently, a systematic screening of silane substituents from group 14 to group 16 was conducted to identify pseudohalides with low reaction barriers. Additionally, we examined the inductive effects on pseudohalide substituents. Using cluster models to represent the silicon surface validates the realistic prediction of ammonolysis barriers with the simplified model. Our findings indicate that pseudohalide substituents from group 16, particularly those with electron-withdrawing groups, present practical alternatives to traditional halosilanes in SiN thin film processing, including applications such as low-temperature atomic layer deposition (ALD) techniques.
chemistry, physical,physics, atomic, molecular & chemical
What problem does this paper attempt to address?