Abstract:AbstractThese proceedings contain the contributions of the 3rd Sino–German Symposium “The Silicon Age: Silicon for Microelectronics, Photonics and Photovoltaics”, which was held from 9 to 14 June 2008 in the HNA Hotel, Hangzhou, P.R. China. Nearly 30 scientists from Germany and China were invited to present their views about different aspects of silicon.In the silicon age, microelectronics has driven the high‐speed development of economy, science and technology in the world during the last century and affects now every aspect of our life. Solar cells based on crystalline Si are expected to cover more than 10% of the worldwide energy consumption in a few decades. Furthermore, there are intensive research activities regarding Si‐based photonics, including on‐chip integration of photonics in CMOS IC technology. In addition, new areas being connected with silicon are starting to appear, such as electrical biochips, micro‐opto‐electro‐mechanics or nanotechnology and nanoelectronics. Silicon, one can reasonably argue, is the most intensively studied solid element of all materials in the world. However, there is still a need for continuation of research and development regarding numerous aspects of Si, which are the field of work of many laboratories all over the world. Examples for such ‘hot’ areas are larger Si crystals/wafers, SiGe hetrostructures for high speed devices, Si‐based light emitters, application of Si in new micro‐opto‐electro‐mechanic devices etc.During the 3rd Sino–German symposium, the progress regarding crystalline silicon materials in different areas has been discussed. German and Chinese scientists from universities and research institutes presented their views about the various facets of silicon materials. The symposium provided a forum for a fruitful, intensive and open communication allowing the participants to build up or intensify relationships for a close cooperation in future.We would like to thank all participants of the symposium for their contributions and the Sino–German Science Centre in Beijing for the financial support of the symposium.October 2008

Flexible Silicon for High-performance Photovoltaics, Photodetectors and Bio-interfaced Electronics

Flexible, Stretchable, and Biodegradable Thin-Film Silicon Photovoltaics

Preface: Phys. Status Solidi C 6/3

Flexible Semiconductor Technologies with Nanoholes-Provided High Areal Coverages and Their Application in Plasmonic-Enhanced Thin Film Photovoltaics

Silicon-Based Technologies for Flexible Photovoltaic (PV) Devices: From Basic Mechanism to Manufacturing Technologies

Printable Nanostructured Silicon Solar Cells for High-Performance, Large-Area Flexible Photovoltaics

Preface: Phys. Stat. Sol. (a) 203/4

Flexible silicon solar cells with high power-to-weight ratios

High-performance Flexible Waveguide-Integrated Photodetectors

A Review on Metastable Silicon Allotropes

Electrostatic Force-Assisted Transfer of Flexible Silicon Photodetector Focal Plane Arrays for Image Sensors

Flexible Integrated Photonic Devices and Applications

Flexible solar cells based on foldable silicon wafers with blunted edges

Silicon-based Heterostructures for Optoelectronic Synaptic Devices

Inorganic Semiconductor-Based Flexible UV Photodetector Arrays Achieved by Specific Flip-Chip Bonding

Advanced Materials for Flexible Solar Cell Applications

Flexible Silicon Heterojunction Solar Cells and Modules with Structured Front-Surface Light Management

Flexible Solar Cells Based on Graphene-Ultrathin Silicon Schottky Junction

Silicone Materials for Flexible Optoelectronic Devices

Flexible Transient Optical Waveguides and Surface‐Wave Biosensors Constructed from Monocrystalline Silicon

Silicon: the Semiconductor Material