Abstract:Recently, atomically thin PdSe$_2$ semiconductors with rare pentagonal Se-Pd-Se monolayers were synthesized and were also found to possess superior properties such as ultrahigh air stability, and high carrier mobility, thus offering a new family of two-dimensional (2D) materials for exploration of 2D semiconductor physics and for applications in advanced opto-electronic and nonlinear photonic devices. In this work, we systematically study the nonlinear optical (NLO) responses [namely, bulk photovoltaic effect (BPVE), second-harmonic generation (SHG) and linear electric-optic (LEO) effect] of noncentrosymmetric bilayer (BL) and four-layer (FL) PdS$_2$ and PdSe$_2$ by applying the first-principles density functional theory with the generalized gradient approximation plus scissors-correction. First of all, the shift current conductivity is in the order of 130 $\mu$A/V$^2$, being very high compared to known BPVE materials. Similarly, their injection current susceptibilities are in the order of 100$\times$10$^8$A/V$^2$s, again being large. Secondly, the SHG coefficients ($\chi^{(2)}$) of these materials are also large, being one order higher than that of the best-known few-layer group 6B transition metal dichalcogenides. For example, the maximum magnitude of $\chi^{(2)}$ can reach 1.4$\times$10$^3$ pm/V for BL PdSe$_2$ at 1.9 eV and 1.2$\times$10$^3$ pm/V at 3.1 eV for BL PdS$_2$. Thirdly we find significant LEO coefficients for these structures in the low photon energy. All these indicate that 2D PdX$_2$ semiconductors will find promising NLO applications. Fourthly, we find that the large BPVE and SHG of the few-layer PdX$_2$ structures are due to strong intralayer directional covalent bonding and also 2D quantum confinement.

Two-dimensional semiconducting SnP<sub>2</sub>Se<sub>6</sub> with giant second-harmonic-generation for monolithic on-chip electronic-photonic integration

Two-dimensional semiconducting SnP2Se6 with giant second-harmonic-generation for monolithic on-chip electronic-photonic integration

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Strong Nonlinear Optics In On-Chip Coupled Lithium Niobate Microdisk Photonic Molecules

Large bulk photovoltaic effect and second-harmonic generation in few-layer pentagonal semiconductors PdS$_2$ and PdSe$_2$

Nonlinear photodetector based on InSe p-n homojunction for improving spatial imaging resolution

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Strong nonlinear optical processes with extraordinary polarization anisotropy in inversion-symmetry broken two-dimensional PdPSe

Low-Pressure PVD Growth SnS/InSe Vertical Heterojunctions with Type-II band Alignment for Typical Nanoelectronics

Inversion symmetry broken 2D SnP2S6 with strong nonlinear optical response

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

SnP<sub>2</sub>S<sub>6</sub>: A Promising Infrared Nonlinear Optical Crystal with StrongNonresonant Second Harmonic Generation and Phase-Matchability

Intercorrelated Ferroelectricity and Bulk Photovoltaic Effect in Two-Dimensional Sn2P2S6 Semiconductor for Polarization-Sensitive Photodetection.

Giant nonlinear optical activity in two-dimensional palladium diselenide

Integration of Cascaded Electro-Optic and Nonlinear Processes on a Lithium Niobate on Insulator Chip.

Two-Dimensional N-Inse/P-Gese(Sns) Van Derwaals Heterojunctions: High Carrier Mobility And Broadband Performance

Electrochemical Peeling Few-Layer SnSe 2 for High-Performance Ultrafast Photonics

High-Efficiency Second-Harmonic and Sum-Frequency Generation in a Silicon Nitride Microring Integrated with Few-Layer GaSe

Van Der Waals Nonlinear Photodetector with Quadratic Photoresponse.

Efficient second harmonic generation by harnessing bound states in the continuum in semi-nonlinear etchless lithium niobate waveguides

An integrated 3C-silicon carbide-on-insulator photonic platform for nonlinear and quantum light sources