Abstract:Indium phosphide (InP) core/shell quantum dots (QDs) without intrinsic toxicity have shown great potential to replace the widely applied cadmium‐containing QDs in next‐generation commercial display and lighting applications. However, it remains challenging to synthesize InP core/shell QDs with high quantum yields (QYs), uniform particle size, and simultaneously thicker shell thickness to reduce nonradiative Förster resonant energy transfer (FRET). Here, thick InP‐Based QLEDs shell InP/GaP/ZnS//ZnS core/shell QDs with high stability, high QY (≈70%), and large particle size (7.2 ± 1.3 nm) are successfully synthesized through extending the growth time of shell materials along with the timely replenishment of shelling precursor. The existence of GaP interface layer minimizes the lattice mismatch and reduces interfacial defects. While thick ZnS shell, which suppresses the FRET between closely packed QDs, ensures high PL QY and stability. The robustness of such properties is demonstrated by the fabrication of green electroluminescent LEDs based on InP core/shell QDs with the peak external quantum efficiency and current efficiency of 6.3% and 13.7 cd A−1, respectively, which are the most‐efficient InP‐based green quantum dot light‐emitting diodes (QLEDs) till now. This work provides an effective strategy to further improve heavy‐metal‐free QLED performance and moves a significant step toward the commercial application of InP‐based electroluminescent device. Thick‐shell InP/GaP/ZnS core/shell quantum dots (QDs) with high stability, high quantum yield, and large particle size (7.2 ± 1.3 nm) are successfully synthesized. The electroluminescent device based on the QDs displays a current efficiency of 13.7 cd A−1 and an external quantum efficiency of 6.3%.

Improved InP/ZnSe/ZnSeS/ZnS Quantum Dots for Single-Terminal Carrier-Injection Light-Emitting Devices

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Green InP/ZnSeS/ZnS Core Multi‐Shelled Quantum Dots Synthesized with Aminophosphine for Effective Display Applications

Quasi‐Shell‐Growth Strategy Achieves Stable and Efficient Green InP Quantum Dot Light‐Emitting Diodes

Preparation of Quantum Dot Light-emitting Diodes Based on the Quantum Dots-CBP Hybrid

Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

White light-emitting quantum dot diodes and tuning of luminescence processes

InP Quantum Dots: Synthesis and Lighting Applications.

Stoichiometry-Controlled InP-Based Quantum Dots: Synthesis, Photoluminescence, and Electroluminescence

High efficiency green InP quantum dot light-emitting diodes by balancing electron and hole mobility

Sequential Growth of InP Quantum Dots and Coordination Between Interfacial Heterovalency and Shell Confinement: Implication for Light-Emitting Devices

High‐Efficiency Green InP Quantum Dot‐Based Electroluminescent Device Comprising Thick‐Shell Quantum Dots

Effect of papaya seed extract on contractile response of cauda epididymal tubules.

InP/ZnS/ZnS Core/Shell Blue Quantum Dots for Efficient Light‐Emitting Diodes

Enhancement of Two-Photon Fluorescence and Low Threshold Amplification of Spontaneous Emission of Zn-processed CuInS2 Quantum Dots

ZnF 2 -Assisted Synthesis of Highly Luminescent InP/ZnSe/ZnS Quantum Dots for Efficient and Stable Electroluminescence

Low temperature synthesis of highly bright green emission CuInS2/ZnS quantum dots and its application in light-emitting diodes

Efficient and Environmentally Friendly White Light-Emitting Diodes with InP-based Quantum Dots Embedded in Mesoporous Silica

High Quantum Yield Blue InP/ZnS/ZnS Quantum Dots Based on Bromine Passivation for Efficient Blue Light‐Emitting Diodes

Synthesis of highly fluorescent InP/ZnS small-core/thick-shell tetrahedral-shaped quantum dots for blue light-emitting diodes

Boosting Efficiency and Stability of Green InP Quantum Dot Light-Emitting Diodes by Interface Dipole Modulation