Abstract:Three-dimensional (3D) flash memory is an emerging memory technology that enables a number of improvements to conventional planar NAND flash memory, including larger capacity, less program disturb, and lower access latency. Despite these advantages, 3D flash memory brings a number of new challenges. First, in 3D flash memory, NAND strings punch through multiple stacked layers to form the 3D infrastructure. Current etching process is unable to manufacture perfect channels with identical feature size. Second, with more stacked layers, the cell current in 3D flash memory is only 20% compared to planar flash memory, making it difficult to give a reliable sensing margin. These issues are affected by process variation, and they pose threats to the integrity of data stored in 3D flash memory. This article present PVSensing, a process-variation-aware space allocation strategy for open-channel SSD with 3D charge-trap flash memory. PVSensing is a novel hardware and file system interface that can transparently allocate physical space in the presence of process variation. PVSensing utilizes the rich functionalities provided by the system infrastructure of open-channel SSD to reduce the uncorrectable bit errors. Three reliability enhancement strategies (i.e., the adaptive creation of fault cubes, the physical block mining, and the live migration of write requests) are proposed. We demonstrate the viability of the proposed technique using a set of extensive experiments. Experimental results show that PVSensing can effectively reduce uncorrectable bit errors, and improve the reliability of critical data with negligible extra erase operations in comparison with representative schemes.

Process Mechanics Model and Asymmetric Residual Stress Analysis During 3-D NAND Manufacturing

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory.

Three Dimensional Interconnect Stress Modeling for Back End Process

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Simulations of Three-Dimensional Thermal Residual Stress and Warpage in Injection Molding

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors

Metrology Challenges in 3D NAND Flash Technical Development and Manufacturing

Process-variation Effects on 3D TLC Flash Reliability: Characterization and Mitigation Scheme

Thermal Stress Analysis of Wafer-Level Multilayer Stacking Process for 3D-TSV Packaging

Channel Modeling and Quantization Design for 3D NAND Flash Memory

Characterization Summary of Performance, Reliability, and Threshold Voltage Distribution of 3D Charge-Trap NAND Flash Memory

Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

Modeling 3D NAND Flash with Nonparametric Inference on Regression Coefficients for Reliable Solid-State Storage

Surface Stress Evolution in Through Silicon Via Wafer During a Backside Thinning Process

Architectural Techniques for Improving NAND Flash Memory Reliability

PVSensing: A Process-Variation-Aware Space Allocation Strategy for 3D NAND Flash Memory

Multi-scale Finite Element Simulation of 2.5D Advanced Packaging for Integrated Circuits during Manufacturing Process

The Application of Thermomechanically Coupled Phase-Field Models in Electronic Packaging Interconnect Structures

Modeling Retention Errors on Modern 3D-Flash Products

Neural Network Based Threshold Voltage Model for 3D TLC NAND Flash