A Harmonic-Suppressed GaN Power Amplifier Using Artificial Coupled Resonator

Letian Guo,Jincheng Zhang,Lihe Nie,Jian Wang,Yong Chen,Junyan Ren,Shunli Ma

DOI: https://doi.org/10.1109/tvlsi.2024.3487002

2024-01-01

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Abstract:This brief presents an 11.5–17.5-GHz power amplifier (PA) with 32-dBm output power in a 0.25- $\mu$ m gallium nitride (GaN) process. Capacitively and inductively coupled resonators are used for impedance matching to achieve a flat in-band power gain and a high out-of-band rejection. Meanwhile, the output matching network provides a second-harmonic suppression to improve the average efficiency within the bandwidth of the PA. The measurements show that the proposed PA exhibits an output power of 31–32.5 dBm and a power gain of more than 10.5 dB from 11.5 to 17.5 GHz. Due to the matching networks providing convenient dc feed and dc block, the chip dimension is only 2.1 $\times$ 1.1 mm $^{2}$ , corresponding to a power density of 0.77 W/mm $^{2}$ . The proposed PA demonstrates a competitive fractional bandwidth and power density in GaN PA monolithic microwave integrated circuits (MMICs).