High-Performance P-Type Bi2Te3-Based Thermoelectric Materials with a Wide Temperature Range Obtained by Direct Sb Doping

Xicheng Guan,Zhiyuan Liu,Ni Ma,Zhou Li,Juan Liu,Huiyan Zhang,Hailing Li,Qian Ba,Junjie Ma,Chuangui Jin,Ailin Xia
DOI: https://doi.org/10.1007/s40195-024-01794-x
2024-01-01
Acta Metallurgica Sinica (English Letters)
Abstract:Doping modification is one of the most effective ways to optimize the thermoelectric properties of Bi2Te3-based alloys. P-type Bi2−xSbxTe3 thermoelectric materials have been successfully prepared by direct Sb doping method. It can be found that doping Sb into Bi2Te3 lattice array for Bi-site replacement facilitates the generation of Sb′Te anti-site defects. This anti-site defects can increase the hole concentration and optimize electrical transport properties of Bi2−xSbxTe3 alloys. In addition, the point defects induced by mass and stress fluctuations and the Sb impurities produced during the sintering process can enhance the multi-scale phonon scattering and reduce the lattice thermal conductivity. As a result, the Bi0.47Sb1.63Te3 sample has a maximum thermoelectric figure of merit ZT of 1.04 at 350 K. It is worth noting that the bipolar effect of Bi2Te3-based alloys can be weakened with the increase of Sb content. The Bi0.44Sb1.66Te3 sample has a maximum average ZT value (0.93) in the temperature range of 300–500 K, indicating that direct doping of Sb can broaden the temperature range corresponding to the optimal ZT value. This work provides an idea for developing high-performance near room temperature thermoelectric materials with a wide temperature range.
What problem does this paper attempt to address?