Large-scale Free-Standing Bi2Te3/Si Heterostructures Developed by a Modified Solvothermal Method for a Self-Powered and Efficient Imaging Photodetector

Song Yang,Shujie Jiao,Yiyin Nie,Yue Zhao,Xiaodi Jia,Shiyong Gao,Dongbo Wang,Jinzhong Wang,Hongwei Liang
DOI: https://doi.org/10.1016/j.jallcom.2024.177694
IF: 6.2
2024-01-01
Journal of Alloys and Compounds
Abstract:Topological insulator bismuth telluride (Bi2Te3), an exotic state of quantum matter, has broad application prospects in next-generation optoelectronic devices. However, photoexcited carriers in Bi2Te3 usually relax rapidly due to the lack of a large band gap. Herein, high-quality Bi2Te3/Si heterojunction is successfully synthesized by a low-cost modified two-step solvothermal method to grow large-scale free-standing Bi2Te3 nanosheets on a Si substrate. Benefiting from the promotion of photogenerated carrier separation and transport by the built-in electric field at the Bi2Te3/Si heterojunction interface, the Bi2Te3/Si heterojunction photodetector exhibits a high responsivity of 16.44mAW-1, a high specific detectivity of 2.44 × 1011 Jones, and fast rise/recovery times of 11/13 ms under 470nm illumination at zero bias. Additionally, the device has potential applications in high-resolution imaging. In view of its overall photosensitivity performance and low cost, the Bi2Te3/Si heterojunction synthesized by the solvothermal method has a promising application in fast broadband photodetectors, and also provide a new route for the growth of Bi2Te3 nanosheets on substrates.
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