Effects of Al2O3 on the Coefficient of Thermal Expansion and Dielectric Properties of Borosilicate Glasses As an Interposer for 3D Packaging

Yuan Liu,Tianpeng Liang,Wei Zheng,Yifan Liu,Haolun Fu,Qian Liu,Chongsheng Wu,Jihua Zhang,Hongwei Chen,Libin Gao,Daming Chen,Yuanxun Li

DOI: https://doi.org/10.1016/j.ceramint.2024.11.317

IF: 5.532

2024-01-01

Ceramics International

Abstract:Borosilicate glass substrates are widely used in packaging utilizing through-glass-via (TGV) technology. In this study, we prepared glass substrate samples with different Al2O3 contents while considering the mixed alkali effects, summation factors, and Dell–Bray model. We then used Raman spectroscopy to analyze the structural changes in the glass network and investigate the thermal expansion and dielectric properties. The thermal expansion coefficients were in the range of 8.17–8.79 × 10-6/°C, and the dielectric losses were in the range of 0.009–0.022 (at 1 GHz). The Raman spectroscopy results showed that the [AlO4] structural units enhanced the network connectivity and limited ion migration; these effects were beneficial for reducing the dielectric loss but limited the improvement of the thermal expansion coefficient. The addition of more than 4 wt% Al2O3 and reduction of the [AlO4] units led to a decrease in the dielectric loss (0.022@1 GHz) and an increase in the coefficient of thermal expansion to 8.53 × 10-6/°C. Differential scanning calorimeter test results indicated that the glass substrate could be used in high-temperature environments. Finally, 55 μm vias were completed using the TGV technique. Overall, this study explored an idea for preparing glass with a high coefficient of expansion and low dielectric loss to address the thermal mismatch and high dielectric loss in electronic packaging systems.