Abstract:With increasing applications of integrated circuits, the requirements for the quality of the corresponding substrate silicon wafers have become more stringent. Slicing is a key step in the manufacturing of silicon wafers. At present, free-abrasive multi-wire saw (MWS) technology is commonly employed for substrate silicon wafer processing. However, the actual temperature field in the cutting zone is unclear because of the narrow cutting zone in multi-wire sawing. Although a simulation method was adopted in this study, the distribution of the slurry in the cutting zone remains ambiguous, causing a large difference between the simulation results. The temperature field is an important cause of warpage, which significantly affects wafer quality. In this study, an experiment and simulation of the temperature field in the cutting zone of a MWS of monocrystalline silicon with free abrasives were performed. First, an experiment was designed to measure the temperatures at different positions in the cutting zone. Then, based on the experimental data of the fluid pressure distribution and the temperature field in the cutting zone, after obtaining the heat source model, a simulation analysis was conducted, and the results are consistent with the experimental results. Finally, based on the heat flux model, the temperature field distribution in the cutting zone under different cutting conditions was simulated and analyzed. Temperatures of 36.7, 39.4, 40.7, and 42.8 °C were obtained at 22.5, 62.5, 137.5, and 177.5 mm, respectively, from the slurry entrance in the cutting zone. According to the heat source model based on the pressure distribution data of slurry in the cutting zone, the temperature values obtained via simulation at 22.5, 62.5, 137.5, and 177.5 mm from the slurry inlet were 35.4, 37.4, 41.5, and 43.1 °C, respectively. The maximum temperature difference is 1.8K°C, and the average temperature difference is 0.2K°C. Thus, the validity of the heat source model was verified. Further, based on the heat source model, the maximum temperature for cutting a 300-mm monocrystalline silicon wafer was predicted as 48.4 °C. Moreover, the wire speed was found to greatly influence the maximum temperature in the cutting zone. Tension also affects the temperature of the cutting zone, but to a lesser extent than the wire speed.

Effect of capillary adhesion on fracture of photovoltaic silicon wafers during diamond wire slicing

Action mechanism of liquid bridge between electroplated diamond wires for ultrathin wafer slicing

The effect of cut depth and distribution for abrasives on wafer surface morphology in diamond wire sawing of PV polycrystalline silicon

Surface formation, morphology, integrity and wire marks in diamond wire slicing of mono-crystalline silicon in the photovoltaic industry

The surface residual stress of monocrystalline silicon in ultrasonic vibration–assisted diamond wire sawing

Experimental Research on the Supply of Working Fluid for Fixed Diamond Wire Slicing Based on Ultrasonic Capillary Effect

Influence of single diamond wire sawing of photovoltaic monocrystalline silicon on the feed force, surface roughness and micro-crack depth

Fractal analysis on the surface topography of Monocrystalline silicon wafers sawn by diamond wire

Evaluation of Fixed Abrasive Diamond Wire Sawing Induced Subsurface Damage of Solar Silicon Wafers

Slicing parameter optimization based on wire net dynamic reliability constraint in multi-wire saw

Prediction of Subsurface Microcrack Damage Depth Based on Surface Roughness in Diamond Wire Sawing of Monocrystalline Silicon

A Microscopic Tem Study Of The Defect Layers In Cast-Mono Crystalline Silicon Wafers Induced By Diamond-Wire Sawing

Experimental Study on the Influence of Wire-Saw Wear on Cutting Force and Silicon Wafer Surface

Recent Advances in Precision Diamond Wire Sawing Monocrystalline Silicon

Influence of silicon anisotropy on surface shape deviation of wafer by diamond wire saw

Thermo-mechanical stress modelling and fracture analysis on ultra-thin silicon solar cell based on super multi-busbar PV modules

Analytical prediction of subsurface damage depth of monocrystalline silicon in ultrasonic vibration assisted wire sawing

A Study on the Lubrication and Cooling Mechanism of Nano–Silicon Carbide Cutting Fluids for Diamond-Wire Sawing

A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques

Effect of Size Distribution of SiC Particles on Silicon Crystals Wire Sawing Process

Study on the temperature field in the cutting zone for machining monocrystalline silicon wafer using free abrasive multi-wire saw