Electron-lattice Coupling Effect to Improve Electrical Transport Properties of La0.7Ca0.3−xKxMnO3 (0.22 ≤ X ≤ 0.28) Films Via Large-Radius K Doping

Zimeng Pan,Jiachen Wang,Zihao Chen,Zhenyu Wang,Yao Wang,Xiaolu Liang,Haitao Wang,Yiliang Liu,Yufei Du,Jiamei Han,Jiabin Jiang,Xin Gu,Xiang Liu

DOI: https://doi.org/10.1016/j.ceramint.2024.11.248

IF: 5.532

2024-01-01

Ceramics International

Abstract:For uncooled infrared bolometers, the traditional thermal sensing materials such as vanadium oxide and amorphous silicon have a relative low value of temperature coefficient of resistivity (TCR). In contrast, perovskite manganese oxide films exhibit 3-5 times higher TCR values than traditional materials. The important challenge is to achieve both high TCR and peak TCR temperatures (Tk) at room temperature. Herein, La0.7Ca0.3−xKxMnO3 (LCKMO, 0.22 ≤ x ≤ 0.28) films were fabricated on La0.3Sr0.7Al0.65Ta0.35O3 (00l) substrates using a combined sol–gel and spin coating process. It was found that by optimizing the K doping amount at x = 0.24, on the one hand, double exchange mechanism becomes the strongest. On the other hand, with minimal lattice strain, electron scattering is inhibited, and the electron-lattice coupling effect improves. Furthermore, the film exhibits a dense surface structure and a uniform distribution of grains. Finally, TCR value reaches 15.95% K−1 at the corresponding temperature of 283.28 K. Obviously, the prepared LCKMO films effectively combine the high TCR of La1−xCaxMnO3 with the high Tk of La1−xKxMnO3 by optimizing the K doping level. The results show that LCKMO films are a promising candidate for fabricating uncooled infrared bolometers.