Investigation of crystal structure, Raman spectroscopy and magnetic properties of La-Zn substituted oriented M-type hexagonal barium ferrites
Shifan Lu,Yingli Liu,Qisheng Yin,Jianfeng Chen,Jian Wu,Jie Li,Pengjie Zhang,Zhi Cong Chen
DOI: https://doi.org/10.1016/j.materresbull.2023.112640
IF: 5.6
2023-12-12
Materials Research Bulletin
Abstract:M-type hexagonal barium ferrite (BaM) has received much attention in the application of self-biased microwave devices because of its large anisotropic field (H a ) and high saturation magnetisation ( M s ), but the increased H a inevitably increases the microwave magnetic loss of the device. In addition, the devices need to have a high M s for high frequency applications. To address these issues, we used La 3+ and Zn 2+ instead of Ba 2+ and Fe 3+ ions to modulate the H a and M s of BaM, respectively. Ba 1-y La y Fe 12-x Zn x O 19 (x=y=0.1-0.5) M-type hexagonal ferrite was synthesised by conventional solid-phase methods. The La-Zn co-substituted BaM samples were shown to be purely single phase by X-ray diffraction (XRD) analysis. The lattice parameters, specific surface area, crystallite size, dislocation density and microstrain of the samples were also calculated using the XRD data. Furthermore, La 3+ and Zn 2+ can not only modulate the sample H a and M s between 10214-12102 Oe and 62.94-78.23 emu/g, respectively. It also increases the dielectric constant of the sample while making it more dense. At x=0.3 BaM detects relatively satisfactory properties: large M s =63.12 emu/g, suitable H a =10214 Oe and H c =2248.87 Oe, high M r / M s =0.832 and low dielectric loss, which provide good candidates for next-generation self-biased and low-loss microwave wave devices.
materials science, multidisciplinary