Abstract:Quantum-mechanics-based transport simulation is of importance for the design of ultra-short channel field-effect transistors (FETs) with its capability of understanding the physical mechanism, while facing the primary challenge of the high computational intensity. Traditional machine learning is expected to accelerate the optimization of FET design, yet its application in this field is limited by the lack of both high-fidelity datasets and the integration of physical knowledge. Here, we introduced a physics-integrated neural network framework to predict the transport curves of sub-5-nm gate-all-around (GAA) FETs using an in-house developed high-fidelity database. The transport curves in the database are collected from literature and our first-principles calculations. Beyond silicon, we included indium arsenide, indium phosphide, and selenium nanowires with different structural phases as the FET channel materials. Then, we built a physical-knowledge-integrated hyper vector neural network (PHVNN), in which five new physical features were added into the inputs for prediction transport characteristics, achieving a sufficiently low mean absolute error of 0.39. In particular, ~98% of the current prediction residuals are within one order of magnitude. Using PHVNN, we efficiently screened out the symmetric p-type GAA FETs that possess the same figures of merit with the n-type ones, which are crucial for the fabrication of homogeneous CMOS circuits. Finally, our automatic differentiation analysis provides interpretable insights into the PHVNN, which highlights the important contributions of our new input parameters and improves the reliability of PHVNN. Our approach provides an effective method for rapidly screening appropriate GAA FETs with the prospect of accelerating the design process of next-generation electronic devices.

Global Field Heterogeneous Graph Neural Networks for Accelerating Quantum Transport Calculation

Physics-integrated Neural Network for Quantum Transport Prediction of Field-effect Transistor

Efficient Linear-Scaling Quantum Transport Calculations on Graphics Processing Units and Applications on Electron Transport in Graphene

Random Nonequilibrium Green's Function Method for Large-Scale Quantum Transport Simulation

AD-NEGF: An End-to-End Differentiable Quantum Transport Simulator for Sensitivity Analysis and Inverse Problems

Boundary Treatments in Non-Equilibrium Green's Function (NEGF) Methods for Quantum Transport in Nano-Mosfets

Low Rank Approximation Method for Efficient Green's Function Calculation of Dissipative Quantum Transport

Fully Convolutional Generative Machine Learning Method for Accelerating Non-Equilibrium Greens Function Simulations

Full Geometric Simulation of Miniaturized GaN Double-Heterojunction High Electron Mobility Transistors by a Multiscale Approach Coupling Quantum and Semi-Classical Transport

Deep Learning Accelerated Quantum Transport Simulations in Nanoelectronics: From Break Junctions to Field-Effect Transistors

Time Dependent Quantum Transport Through Graphene Nanoribbons

ELEQTRONeX: A GPU-Accelerated Exascale Framework for Non-Equilibrium Quantum Transport in Nanomaterials

QEGCN: an FPGA-based Accelerator for Quantized GCNs with Edge-Level Parallelism

Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF

Predicting interacting Green's functions with neural networks

Time-dependent quantum transport theory and its applications to graphene nanoribbons

Global Flux Surface Hopping Approach for Mixed Quantum-Classical Dynamics.

Time-dependent transport: Time domain recursively solving NEGF technique

Quantum modeling for nanoscale double gate MOSFETs based on Green's function

Accelerated Modelling of Interfaces for Electronic Devices using Graph Neural Networks

Extreme Acceleration of Graph Neural Network-based Prediction Models for Quantum Chemistry