Miniaturized and High-Selective Filtering Power Divider Based on GaAs IPD Technology for 5G N77 Applications

Yan Zheng,Yuandan Dong
DOI: https://doi.org/10.1109/iws61525.2024.10713547
2024-01-01
Abstract:In this paper, a miniaturized N77 filtering power divider (FPD) is designed on a GaAs substrate based on the integrated passive device (IPD) fabrication process, which exhibits good out-of-band rejection characteristics. It achieves a third-order bandpass frequency response, with transmission zeros (TZs) on both sides of the passband of 0.4 GHz and 3.4 GHz, respectively. In addition, the parasitic capacitance of inductors is applied to generate TZ at higher frequencies. The bandpass response has a center frequency of 3.51 GHz and a bandwidth of about 71.5 %. The isolation between the two output ports is better than -12 dB. The minimum insertion loss is 0.68 dB, and the isolation is better than -16 dB. Moreover, the chip area is only 1.15 mm × 1.25 mm. Simulation and measured results show that the proposed FPD can achieve equal power distribution with wide bandwidth, high isolation, low insertion loss, and miniaturization. The TZs effectively improve the roll-off coefficient and out-of-band rejection in the passband, and improve the performance of out-of-band filtering and selection.
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