Effects of Partial Eu Filling in the Unfilled Skutterudite CoP3 3

Zicheng Tao,Chao Zhang,Jian Yuan,Renjie Zhang,Xia Wang,Zhenhai Yu,Wei Xia,Yaobo Huang,Shihao Zhang,Yanfeng Guo

DOI: https://doi.org/10.1103/physrevb.110.035156

IF: 3.7

2024-01-01

Physical Review B

Abstract:The unfilled skutterudite CoP3 3 hosts extremely large magnetoresistance (<^>2 <^> 2 x 104% 4 % at 30 T and 2 K), large hole mobility (<^>2 <^> 2 x 104 4 cm2 2 V-1 - 1 s-1, - 1 , 2 K), and a fourfold quadratic contact point (QCP) above the Fermi level in the electronic structure. We unveil herein that the partial filling of Eu onto the icosahedral void sites of CoP3 3 can shift the QCP to lie below the Fermi level while retaining the high carrier mobility (<^>1.6 <^> 1.6 x 104 4 cm2 2 V-1 - 1 s-1, - 1 , 2 K). Unlike nonmagnetic CoP3, 3 , partially filled skutterudite Eu 0 . 412 Co 4 P 12 is a soft ferromagnet with almost isotropic magnetism. Additionally, an intriguing topological Hall effect is observed, likely hinting an unusual spin texture. In this paper, we provide useful insights into the interplay between magnetism and the nontrivial feature of the electronic band structure, which would guide more efforts in studying this issue.