Growth, Characterization and Theoretical Analysis of Α-Srgeo3 As a Candidate Mid-Ir Stimulated Raman Scattering Crystal

Hailong Wang,Bin Li,Ying Zhou,Guimei Zheng,Xue Zhang,Songming Wan
DOI: https://doi.org/10.1039/d4tc03340j
IF: 6.4
2024-01-01
Journal of Materials Chemistry C
Abstract:The alpha-BaGeO3 crystal is a potential stimulated Raman scattering (SRS) medium for use in generating lasers at wavelengths in the range of 2.1-2.4 mu m. However, the growth of a large-sized and high-quality alpha-BaGeO3 crystal is still challenging. Here, we turn the attention to its analogue, alpha-SrGeO3. The alpha-SrGeO3 crystal was grown by the high-temperature solution method under conditions similar to those for growth of alpha-BaGeO3. The grown alpha-SrGeO3 single crystals have larger sizes (approximately 8 x 12 x 10 mm(3)) and higher quality than alpha-BaGeO3. A strong Raman peak at 813 cm(-1) and a wide transparent window from 0.22 to 5.78 mu m indicate that the alpha-SrGeO3 crystal is a promising SRS crystal working in the 2.1-2.4 mu m wavelength range. From density functional theory (DFT) computations, the strongest Raman peak, the ultraviolet cut-off edge and the infrared cut-off edge of alpha-SrGeO3 are all related to the [Ge3O9](6-) ring, the basic building unit in both alpha-SrGeO3 and alpha-BaGeO3, which suggests that the [Ge3O9](6-) ring is a valuable structural group for developing new mid-IR SRS crystals.
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