Abstract:The transportable quantum memory is a viable solution for realizing the long-distance quantum communication, which requires a storage lifetime of the order of hours. The isotope-enriched $^{151}$Eu$^{3+}$:Y$_2$SiO$_5$ crystals are promising candidates for this application. However, their optical storage efficiency and spin storage lifetime is limited by the wide inhomogeneous linewidth. In this work, we successfully cultivated isotope-enriched $^{151}$Eu$^{3+}$:Y$_2$SiO$_5$ crystals with varying doping concentrations utilizing the Czochralski method. The optical inhomogeneous broadening and spin inhomogeneous broadening are measured by the optical absorption spectroscopy and optically detected magnetic resonance tests, respectively. Notably, in the undoped samples, we identified a baseline level of inhomogeneous broadening linewidths, registering at 390 $\pm$ 15 MHz for optical inhomogeneous broadening and 4.6 $\pm$ 0.2 kHz for spin inhomogeneous broadening. Our findings reveal that point defects, induced by the doping ions, significantly contribute to the inhomogeneous broadening, at a rate of 0.97 MHz/ppm for optical broadening and 0.014 kHz/ppm for spin broadening. Furthermore, we discussed the impact of dislocations on inhomogeneous broadening and proposed potential strategies to further mitigate these effects. Such advancements hold promise for fostering the development of ultra-long-lifetime transportable quantum memory applications. The optical inhomogeneous linewidth fitted as a function of $^{151}$Eu$^{3+}$ concentrations. $[^{151}$Eu$^{3+}]$ is the concentration of $^{151}$Eu$^{3+}$ ions. $\Gamma_{\rm opt-inh}$ is the optical inhomogeneous linewidth. Black squares stand for the data points. The red and blue lines represent linear fits of 0 ppm to 100 ppm and 100 ppm to 1000 ppm, respectively. The fitting equations are depicted in the graph, accompanied by arrows indicating their corresponding lines. (b) The fitting curve of concentration-dependent variation in the spin inhomogeneous broadening. $[^{151}$Eu$^{3+}]$ stands for the concentration of $^{151}$Eu$^{3+}$ ions. $\Gamma_{\rm spin-inh}$ represents the spin inhomogeneous linewidth. Black squares are the data points. The red and blue lines represent linear fits ranging from 0 ppm to 100 ppm and from 100 ppm to 1000 ppm, respectively. The fitted equations are illustrated in the graph, pointing to their respective lines by arrows.

Optical and Hyperfine Spectroscopic Investigations on Europium Ions Doped in Yttrium Orthosilicate Waveguides Fabricated by Focused Ion Beam Milling

Concentration-dependent Optical and Spin Inhomogeneous Linewidth of Europium-Doped Yttrium Orthosilicate Crystals

A Raman Heterodyne Study of the Hyperfine Interaction of the Optically-Excited State 5D0 of Eu3+:Y2SiO5

A Raman-Heterodyne Study of the Hyperfine Interaction of the Optically-Excited State $^5$D$_0$ of Eu$^{3+}$:Y$_2$SiO$_5$

Reliable Coherent Optical Memory Based on a Laser-Written Waveguide

Concentration dependence of the optical and spin inhomogeneous linewidth in Europium-doped yttrium orthosilicate crystals

Hyperfine states of erbium doped yttrium orthosilicate for long-coherence-time quantum memories

Coupling of erbium dopants to yttrium orthosilicate photonic crystal cavities for on-chip optical quantum memories

Optical Investigations of Coherence and Relaxation Dynamics of a Thulium-doped Yttrium Gallium Garnet Crystal at sub-Kelvin Temperatures for Optical Quantum Memory

Spectroscopic Investigations of 142nd3+:Yvo4 for Quantum Memory Applications

Atomic Frequency Comb Optical Memory in EuCl3·6H2O Crystal

Coherent Optical Memory Baesd on A Laser-written On-chip Waveguide

Coherent Optical Memory Based on a Laser-Written On-Chip Waveguide

Efficient Pumping of Spectral Holes in a Tm$^{3+}$: YAG Crystal for Broadband Quantum Optical Storage

Quantum Memory and Manipulation Based on Erbium Doped Crystals

High Resolution Optical Spectroscopy and Magnetic Properties of Yb3+ in Y2SiO5

Optical coherence and spin population dynamics in $^{171}$Yb$^{3+}$:Y$_2$SiO$_5$ single crystals

A Frequency-Multiplexed Coherent Electro-optic Memory in Rare Earth Doped Nanoparticles

Integrated spin-wave quantum memory

Extending the spin coherence lifetimes of <SUP>167</SUP>Er<SUP>3+</SUP> :Y<sub>2</sub>SiO<sub>5</sub> at subkelvin temperatures

Initialisation protocol for efficient quantum memories using resolved hyperfine structure