Unconventional Exchange Bias and Enhanced Spin Pumping Efficiency Due to Diluted Magnetic Oxide at the Co/ZnO Interface

Xiaoqi Liao,Chunmei Wang,Duo Zhao,Wei Tang,Huawei Liang,Yu-Jia Zeng,Chris Van Haesendonck,Qinghai Song,Haoliang Liu
DOI: https://doi.org/10.1063/5.0209098
IF: 15
2024-01-01
Applied Physics Reviews
Abstract:Exchange bias (EB) is normally created by the interfacial exchange coupling at a ferromagnetic/antiferromagnetic (FM/AFM) interface. FM/AFM interfaces have also been proved to perform enhanced spin angular momentum transfer efficiency in spin pumping (SP), compared with typical FM/nonmagnetic interfaces. Here, we report an unexpected EB and enhanced SP between a ferromagnet and semiconductor. Considerable EB has been observed in Co films grown on ZnO single crystal due to the interface antiferromagnetism of the Zn1-xCoxO (x depends on the Co solubility limit in ZnO) layer. Moreover, SP measurements demonstrate a giant spin pumping efficiency at the Co/ZnO interface with a bump (spin mixing conductance G(eff)(up arrow down arrow)= 28 nm(-2)) around the blocking temperature T-B similar to 75 K. The enhanced SP is further confirmed by inverse spin Hall effect measurements and the spin Hall angle theta(ISHE) of Zn1-xCoxO is estimated to be 0.011. The bound magnetic polarons with s-d exchange interaction between donor electrons and magnetic cation ions in Zn1-xCoxO play a key role in the formation of antiferromagnetism with giant G(eff)(up arrow down arrow). Our work provides a new insight into spin physics at FM/semiconducting interfaces. (C) 2024 Author(s).
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