MXene Nano-thin Films Reaching Thin-Film Absorption Limit in 0.5-10 THz

Tao Zhao,Hujie Wan,Tianpeng Ding,Xu Xiao
DOI: https://doi.org/10.1109/irmmw-thz60956.2024.10697874
2024-01-01
Abstract:We demonstrate that ultrathin 10.2-nm-thick (~ λ/30000) Ti 3 C 2 T x MXene assemblies can reach the intrinsic thin-film absorption limit (50%) in the entirety of 0.5-10 THz. Such ultra-broadband absorption limit is attributed to the high concentration of free electrons (~10 21 cm -3 ), short relaxation time (~10 fs), and unique intra- and inter-flakes (hopping) electron transport properties in Ti 3 C 2 T x MXenes. Besides, we validate that the ultra-broadband THz absorption should be explained by alternating current impedance theory using the Drude-Smith model rather than classic direct current impedance matching. These findings presented here will stimulate more studies in broadband THz technologies with MXenes and beyond, which also provides an attractive route for developing compact, supercontinuum terahertz optoelectronic or photothermoelectric devices.
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