Abstract:The authors demonstrate two newly discovered defect‐mediated emissions from plasma irradiated monolayer WS2, which are even more efficient than the free exciton emissions at room temperature. By constructing integrated light sources driven by alternating currents, the defective sample shows an external quantum efficiency ≈1.39%, which is currently the highest among transient van der Waals LEDs at room temperature. Despite defect‐mediated states in monolayer semiconductors have been considered as efficient emitters in cryogenic conditions, they are severely quenched at room temperature (RT) because of multiple thermal‐induced non‐radiative channels, hindering their practical use. Here, robust and tunable defect‐mediated emissions at RT, designated as D1 (1.82 eV) and D2 (1.62 eV), are discovered in monolayer WS2 through argon plasma treatment, which, via multiple corroborative experiments, are attributed to distinct physical processes: bound excitons associated with sulfur vacancies (Vs) and the band‐to‐acceptor recombination, respectively. Remarkably, the defective sample exhibits over ten‐fold increase in both photoluminescence quantum yield and full‐width at half‐maximum (FWHM) compared to its intrinsic counterpart. Leveraging these pronounced edges, light‐emitting diodes (LEDs) functioning at RT achieve broadband (FWHM: 490 meV) and continuously tunable emission from 1.6 to 2.0 eV, as well as the highest electroluminescence (EL) external quantum efficiency (EQE) of ≈1.39% among transient LEDs based on monolayer semiconductors to date, thereby unveiling a new strategy for emission tailoring at the atomic‐scale limit.

Room-temperature Efficient and Tunable Interlayer Exciton Emissions in WS2/WSe2 Heterobilayers at High Generation Rates.

Room-temperature efficient and tunable interlayer exciton emissions in WS_2/WSe_2 heterobilayers at high generation rates

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Tailoring Photoluminescence of WS2-microcavity Coupling Devices in Broad Visible Range

Observation of Double Indirect Interlayer Exciton in WSe2/WS2 Heterostructure.

Ultrathin WS2‐on‐Glass Photonic Crystal for Self‐Resonant Exciton‐Polaritonics

Charge-Transfer-Induced Photoluminescence Properties of WSe2 Monolayer-Bilayer Homojunction.

Defect‐Mediated Efficient and Tunable Emission in van der Waals Integrated Light Sources at Room Temperature

Bright and Dark Quadrupolar Excitons in the WSe_{2}/MoSe_{2}/WSe_{2} Heterotrilayer.

Giant Photoluminescence Enhancement of Monolayer WSe2 Using a Plasmonic Nanocavity with On-Demand Resonance

Enhanced Photoluminescence of WS2/WO3 Heterostructural QDs

Localization and interaction of interlayer excitons in MoSe$_2$/WSe$_2$ heterobilayers

Emission Enhancement and Exciton Species Modulation in Monolayer WS2 Via Decoration of CdTe Quantum Dots

Plasmonic-hot-electron mediated room-temperature generation of charged biexciton in monolayer

Localized interlayer excitons in MoSe2–WSe2 heterostructures without a moiré potential

Observation of double indirect interlayer exciton in MoSe2/WSe2 heterostructure

Enhanced directional emission of monolayer tungsten disulfide (WS2) with robust linear polarization via one-dimensional photonic crystal (PhC) slab

All-Optical Valley Polarization Switch Via Controlling Spin-Triplet and Spin-Singlet Interlayer Exciton Emission in WS2/WSe2 Heterostructure.

Electrically-tunable non-radiative lifetime in WS2/WSe2 heterostructure

Van der Waals epitaxy of type-II band alignment CsPbI3/TMDC heterostructure for optoelectronic applications

Observation of the Interlayer Exciton Gases in WSe$_2$ -p: WSe$_2$ Heterostructures