Weakened Charge Trapping at the Electrode/active Layer Interface in a Bulk Heterojunction-Based Organic Phototransistor for Quick Photomultiplication

Chaoran Liu,Shicheng Xiong,Di Sun,Zengqi Xie,Linlin Liu

DOI: https://doi.org/10.1039/d4tc02177k

IF: 6.4

2024-01-01

Journal of Materials Chemistry C

Abstract:Incorporation of receptors leads to degradation of photodetection performance when metal electrode devices with more matched energy levels are used.

What problem does this paper attempt to address?

Role of interfaces in controlling charge accumulation and injection in the photodetection performance of photomultiplication-type organic photodetectors

Dechao Guo,Dezhi Yang,Jingcheng Zhao,Agafonov Vadim,Dongge Ma

DOI: https://doi.org/10.1039/d0tc01590c

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Large tunneling of electrons from the electrode by hole accumulation is an efficient way to realize photomultiplication-type organic photodetectors, in which the interface plays a very important role in the control of charge accumulation and injection. Here, we systematically studied the effects of the hole blocking layer (HBL) on the photodetection performance of the resulting photomultiplication-type organic photodetectors and found that the larger highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels and higher electron mobility of the used HBL materials are more conducive to the hole accumulation and electron injection, thus achieving higher external quantum efficiency (EQE). However, as we see, this also brought about a large dark current. For this, we further introduced electron traps by doping MoO(3)in the electron transporting layer near the HBL to reduce the electron injection at the dark state by the electron trapping effect of MoO3. Finally, the optimized photodetectors showed high EQEs of over 10 000% in the wavelength range of 300-650 nm and the maximum EQE was as high as 122 270% at 345 nm wavelength under -6 V reverse bias. The corresponding specific detectivity reached 5.9 x 10(12)Jones.
Space charge and active-layer capacitance of bulk heterojunction-based phototransistors

Meihua Shou,Qinglei Zhang,Yu Zhang,Xuehua Hou,Jiaxin Zheng,Jiadong Zhou,Shicheng Xiong,Nan Zheng,Zengqi Xie,Linlin Liu

DOI: https://doi.org/10.1039/d2tc02887e

IF: 6.4

2022-10-19

Journal of Materials Chemistry C

Abstract:In phototransistors with bulk heterojunctions, long conductive channels with tens of microns length supply the discontinuous phase morphology and unbalanced charge transport, result in an obvious storage of photoinduced charges; however, the traditional theory of transistors only considers the geometric capacitance of gate dielectrics. In this study, we built an experimental model and an equivalent circuit of bulk heterojunction-based phototransistor, and developed an experimental method for the monitoring the space charge and apparent capacitance of phototransistors by the carrier lifetime and gain. In PDPPBTT:PC 61 BM-based devices with a gain of up to 3.2 K, the apparent capacitance became tens times the geometric capacitance of gate dielectrics. The solvent additive and PC 61 BM content can effectively control the carrier lifetime, film morphology and the corresponding apparent capacitance. In particular, as the only parameter with a contrary change to gain, the regulation of capacitance plays a crucial role in reconciling the contradiction between gain and response speed and realizing high gain and fast response. These results indicate the important role of space charge and the potential applications of bulk heterojunctions in long carrier channel-based devices.

materials science, multidisciplinary,physics, applied
Transient analysis of photomultiplication-type organic photodiodes

Songxue Bai,Ruiming Li,Huihuang Huang,Yiming Qi,Yalun Xu,Jiannan Song,Fang Yao,Oskar J. Sandberg,Paul Meredith,Ardalan Armin,Qianqian Lin

DOI: https://doi.org/10.1063/5.0083361

IF: 15

2022-06-01

Applied Physics Reviews

Abstract:Photomultiplication-type organic photodetectors have emerged as a class of next generation solution-processed photodetectors with high gain. Despite this promising feature, the reported photodectors still suffer from relatively large dark currents at high bias voltages. To overcome this drawback, a mechanistic understanding of the photomultiplication effect in organic photodiodes is required. In this work, we advanced the performance of photomultiplication-type organic photodetectors by tuning the active layer composition and interfacial layers. The optimized devices exhibit small dark currents and flat dark current–voltage curves under the reverse bias condition up to −10 V. The optimized photodetectors also reached an ultra-high responsivity of 23.6 A/W and the specific detectivity of 1.04 × 10 12 Jones at −10 V. More importantly, we investigated the photomultiplication process with multiple transient techniques and revealed that the photoconductive gain effect is a slow process, which relies on the photo-Schottky effect enabled by charge carrier tunneling and the accumulation of holes. Furthermore, we also demonstrated prototypical pulsed-light detection based on the optimized devices, which showed great potential for real applications.

physics, applied
Ultrahigh Detectivity Near-Infrared Organic Phototransistor Assistant by Additional Electron Traps sites in Dielectric Layer

Meihua Shou,Jiaxin Zheng,Xinpeng Liu,Jiadong Zhou,Zengqi Xie,Qing Liao,Haiou Li,Linlin Liu

DOI: https://doi.org/10.1039/d4tc04463k

IF: 6.4

2024-12-07

Journal of Materials Chemistry C

Abstract:The introduction of electrons traps can effectively increase the device photocurrent since the photovoltaic-induced current of the phototransistors is proportional to the turn-on voltage shift and the total number of trapped charges. However, high-concentration carrier trap sites in the active layer introduced strong current traps and carrier recombination, which reduce the photocurrent of phototransistors especially for narrow-band near-infrared photo detection. In this study, an additional electronic traps were introduced into the dielectric layer of phototransistor, demonstrating stable photoinduced charge traps for high photocurrent and photomultiplier without carriers quenching in the active layer. For organic phototransistor with additional electronic traps in dielectric layer, the response time remained basically unchanged after adding ZnO nanoparticles (ZnO-NPs) with relatively low thickness (≤ 16 nm). The turn-on voltage shift (Von) increased from 19 V to 26 V and the specific detectivity calculated by the dark current (shot noise, ) increased from 6.2 × 10 15 Jones to 2.78 × 10 16 Jones (@Vg = 3 V, 0.031 mW cm -2 of 820 nm, Vg is the gate voltage) as the additional electron traps was added into the organic phototransistor. It is of great the optical and practical value for the high-performance photodetectors with good overall performance.

materials science, multidisciplinary,physics, applied
Developing efficient small molecule-based organic photo-couplers by optimizing the cathode interfacial layer in the photodetector

Richie Estrada,Dian Luo,Chih-Chien Lee,Johan Iskandar,Sajal Biring,Nurul Ridho Al Amin,Abdul Khalik Akbar,Chih-Hsin Chen,Chang-Wei Yu,Tran My Dung Pham,Shun-Wei Liu

DOI: https://doi.org/10.1039/d3tc00188a

IF: 6.4

2023-01-01

Journal of Materials Chemistry C

Abstract:Thorough electrical and optical characterizations are carried out herein to investigate the phenomena of thermionic field emission, trap density, and exciton quenching, which justifies the superior performance of the proposed organic photo-coupler.

materials science, multidisciplinary,physics, applied
Diminished Trap-Induced Leakage Current at the Organic/Electrode Interface for High-Performance Organic Photodetectors

Huan Cao,Yichuan Si,Yuan Xie,Jingwen Li,Guanghong Liu,Hongbin Wu

DOI: https://doi.org/10.1021/acsaelm.1c00563

IF: 4.494

2021-01-01

ACS Applied Electronic Materials

Abstract:The influence of the absence of a pi-conjugated polymer-based charge-blocking layer (CBL) or interlayer between the photoactive layer/electrode interface in organic photodetectors (OPDs) is investigated. As compared to devices with a charge-blocking layer, OPDs with a metal/photoactive layer/metal sandwich structure exhibit similar external quantum efficiency but lower dark current density hence a higher specific detectivity (D*). The decrease in dark current density in devices without a CBL can be attributed to the elimination of additional trap states in the CBL, provided that a large charge injection barrier is maintained at the metal/active layer interface. In a device with the CBL, a clear dependence between the density of trap states (tDOS) and the magnitude of dark current density is verified. As such, suppressing undesired injection and trap-induced leakage current may cancel each other out in the device with a CBL. By evaluating the trap-induced leakage of current, we proposed that the key to obtain high specific detectivity in OPDs is to use a charge-blocking layer with low trap density or to use a CBL-free device structure.
Suppressed Trap Density Leads to Versatile P‐i‐n Heterojunction Photodiode with Enhanced Photovoltaic/Photodetection Dual‐Function

Yi Wei,Zining Li,Jiajing Feng,Yu Chen,Jianqi Zhang,Yawen Li,Wei Jiang,Tianrui Zhai,Yuze Lin,Zhixiang Wei,Zhaohui Wang,Ningning Liang

DOI: https://doi.org/10.1002/adom.202202606

IF: 9

2023-01-01

Advanced Optical Materials

Abstract:Multifunctional integration of optoelectronic devices within a single photodiode is in high demand for next-generation on-chip multifunctional integration and Internet of Things applications. Owing to the rapidity of nucleation-crystallization that is associated with the solution method, large trap state densities (N-t), and consequently, severe dark current densities, as well as recombination losses are generally induced, which are detrimental to the detectivity (D*) of organic photodetectors (OPDs) and to the open-circuit voltage (V-OC) of organic photovoltaics (OPVs). Herein, a versatile p-i-n heterojunction organic photodiode with optimized vertical phase distribution and rational solid-state packing is fabricated via a layer-by-layer (LBL) deposition procedure entailing the introduction of a rylene-fullerene hybrid as a morphological modulator. This precisely controlled photodiode displayed suppressed N-t (2.5 x 10(16) cm(-3)), low-lying Urbach energy E-u (23.2 meV), as well as synergistically reduced series resistance, dark current, and sub-bandgap radiative/non-radiative recombination losses. Consequently, this ternary-pseudo-bilayer-type photodiode exhibits excellent dual-function performance with an outstanding D* of 9.48 x 10(11) Jones in self-powered OPD mode and a surprisingly suppressed energy loss of 0.538 eV in OPV mode. This study provides important insights into the mechanism and effects of trap density and energy disorder suppression in solution-processed multifunctional integrated photoelectric conversion diodes.
Light-assisted charge injection and depletion of insulator electrets for organic field-effect transistors

Yurong Ren,Yuanwei Zhu,Dongfan Li,Peng Wei,Wanlong Lu,Laju Bu,Guanghao Lu

DOI: https://doi.org/10.1039/c9tc02916h

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:A semiconductor/electret layered configuration is attractive for organic field-effect transistors, and the reversible generation of hole or electron charged electrets within the device requires effective charge transport in the semiconductor. Here, in a transistor with an n/p/electret tri-layer configuration, illumination is used to assist reversible charge (hole and electron) injection and depletion of insulator electrets.
Hybrid Interfacial Engineering: An Enabling Strategy for Highly Sensitive and Stable Perovskite Quantum Dots/Organic Heterojunction Phototransistors

Yuanhong Gao,Shuai Sun,Dan Qiu,Yu-Ming Wei,Mengpei Zhang,Jin Liu,Paul K. Chu,Wen-Long You,Jia Li

DOI: https://doi.org/10.1021/acsphotonics.2c01983

IF: 7

2023-02-22

ACS Photonics

Abstract:All-inorganic lead halide perovskite quantum dots (PQD) have attracted tremendous research interest in the field of phototransistors due to their excellent optoelectronic properties. However, the inefficient charge transport/extraction and high trap-state density of the assembled PQD films seriously limit the photoresponsivity of PQD-based phototransistors. Herein, we demonstrate that these limits can be overcome by adopting a novel device architecture composed of a polar-polymer capping layer on a PQD/organic semiconductor (OSC) heterojunction. The polar polymer film plays the role of both electron trapping and encapsulation, whereas OSC provides the fast transport tracks for charges and PQD serves as the photoactive materials. Owing to the balanced dynamic processes of photogenerated charges, highly sensitive photodetection is achieved, as demonstrated by the peak photosensitivity of 1.5 × 104, a photoresponsivity of 2.1 × 104 A/W, a detectivity of 1 × 1015 Jones, and a high gain of 6.4 × 104 under weak incident light of 3 μW/cm2. Additionally, the phototransistors exhibit superior stability and reproducibility with negligible changes in the output current both in darkness and under illumination after storing for 4 months. The results demonstrate the promising potentials of the polar polymer/PQD/OSC heterojunction for high-performance photodetectors, and the mechanism and strategy described here can be applied to other kinds of quantum dots-based optoelectronic devices.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Few-layered organic single-crystalline heterojunctions for high-performance phototransistors

Xinzi Tian,Jiarong Yao,Lijuan Zhang,Bin Han,Jianwei Shi,Jianwei Su,Jie Liu,Chunlei Li,Xinfeng Liu,Tianyou Zhai,Lang Jiang,Fangxu Yang,Xiaotao Zhang,Ye Zou,Rongjin Li,Wenping Hu

DOI: https://doi.org/10.1007/s12274-021-3730-3

IF: 9.9

2021-08-05

Nano Research

Abstract:Photogating and electrical gating are key physical mechanisms in organic phototransistors (OPTs). However, most OPTs are based on thick and polycrystalline films, which leads to substantially low efficiency of both photogating and electrical gating and thus reduced photoresponse. Herein, high-performance OPTs based on few-layered organic single-crystalline heterojunctions are proposed and the obstacle of thick and polycrystalline films for photodetection is overcome. Because of the molecular scale thickness of the type I organic single-crystalline heterojunctions in OPTs, both photogating and electrical gating are highly efficient. By synergy of efficient photogating and electrical gating, key figures of merit of OPTs reach the highest among those based on planar heterojunctions so far as we know. The production of few-layered organic single-crystalline heterojunctions will provide a new type of advanced materials for various applications.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
High-Performance Organic Phototransistors Based on D18, a High-Mobility and Unipolar Polymer

Huihuang Huang,Li Jiang,Jiali Peng,Yiming Qi,Songxue Bai,Qianqian Lin

DOI: https://doi.org/10.1021/acs.chemmater.1c02839

IF: 10.508

2021-10-11

Chemistry of Materials

Abstract:Organic optoelectronics has progressed excitingly in recent years, mainly due to the innovation of donor and acceptor systems. Organic photodetectors based on novel semiconductor materials and well-designed device architectures have also been reported with improved device performance. However, most of them were photodiodes, and it is challenging to integrate them into the well-established readout circuits. Organic phototransistors are mainly based on the hybrid strategy, composed of either hybrid films or multilayer device structures, which complicates charge transfer and charge transport. Most of the organic devices also suffer from poor stability. In this work, we introduce a recently developed p-type copolymer, D18, to fabricate high-performance phototransistors. D18 possesses excellent charge generation, high mobility, and unipolar charge transport, which fulfill the generic design rule of organic phototransistors. The optimized phototransistors based on D18 exhibited extremely low dark current (∼10 pA) and noise (∼10 fA/Hz1/2), a high detectivity of 4 × 1013 Jones, a swift response of <5 ms, and excellent device stability. We also demonstrated flexible phototransistors with decent performance metrics, indicating great potential for next-generation solution-processed photodetectors and flexible electronic devices.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.chemmater.1c02839.TRMC measurements, calculation of mobility based on MIS-CELIV transients, calculation of mobility based on transfer curves, comparison of transfer curves based on various substrates, temperature-dependent output curves, light intensity-dependent output curves, device performance with various active layer thicknesses, responsivity spectrum, and temporal response under various light sources (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical
Organic Charge-Transfer Interface Enhanced Graphene Hybrid Phototransistors

Xiaolong Liu,Xiaoqing Chen,Juxia Yi,Zhongzhong Luo,Haiyan Nan,Hui Guo,Zhenhua Ni,Yong Ding,Songyuan Dai,Xinran Wang

DOI: https://doi.org/10.1016/j.orgel.2018.10.004

IF: 3.868

2019-01-01

Organic Electronics

Abstract:Benefited from the advantages of light sensitivity of organic materials and high carrier mobility of graphene, organic semiconductor/graphene hybrid phototransistors exhibit ultrahigh photoconductive gain and photoresponsivity, attributed to the carrier multiplication effect in the organic layer. However, with single absorbing layer, the built-in electrical field between organic layer and graphene is insufficient, and spectral response range is limited. In this work, perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) and 2,7-dioctyl[1]benzothieno [3,2-b] [1]benzothiophene (C-8-BTBT) organic tandem structure with high crystal quality fabricated via van der Waals vapor phase growth is adopted as the light absorbing layer, where suppressed carrier trap states density along with the additional charge-transfer interface between the organic layers result in overall improvement of device performance. Prominent photo-responses are observed with photoresponsivity up to 5.76 x 10(5)A/W and photoconductive gain up to 1.38 x 10(9). Further more, complementary light absorption spectrum of these two organic materials fulfills effective photodetecting at ultraviolet and visible range.
Enhanced Detectivity of Organic Photodetectors with a Non-Conjugated Polymer Additive

Zhe Liu,Yu Song,Kang An,Ling Hong,Wenkai Zhong,Yunhao Cao,Kai Zhang,Ning Li,Fei Huang,Yuguang Ma,Yong Cao

DOI: https://doi.org/10.1063/5.0162270

IF: 4

2023-01-01

Applied Physics Letters

Abstract:Organic photodetectors have attracted increasing attention in the scenario of low-cost imaging, health monitoring, and near-infrared sensing. However, relatively high dark current and trap density block the sensitivity for organic photodetectors. In this manuscript, a simple yet effective strategy is proposed to enhance the detectivity of organic photodetectors by incorporating a non-conjugated polymer additive of polystyrene into the functional layers. Systematic morphological investigation reveals that this strategy can not only enable suppressed amorphous phase but also effectively tune the phase separation in the bulk heterojunction blends. Electrical results suggest the suppressed trap density in optimized organic photodetectors. Consequently, a dark current density of 5.06 × 10−10 A cm−2 is achieved for PM6:Y6-BO-based organic photodetectors, showing a peak detectivity of 6.38 × 1013 cm Hz1/2 W−1 at 850 nm. This strategy is also applicable in various representative organic-semiconductor systems, including PTB7-Th:PC71BM and P3HT:PC61BM blends, superior to other optimization techniques.
Enabling a High-Sensitivity and Fast-Response Organic Phototransistor Based on an “embedded” Heterojunction Toward Broadband High-Speed Imaging

Yanxun Zhang,Qianqian Du,Mei Cui,Fengzhe Ling,Kai Wang,Shuchao Qin,Wenjun Wang,Jiandong Ye

DOI: https://doi.org/10.1021/acs.cgd.3c01402

IF: 4.01

2024-01-01

Crystal Growth & Design

Abstract:Organic phototransistors (OPTs) are promising candidates for broadband light detection, offering advantages of spectral tunability, cost-effectiveness, and flexibility. Nonetheless, their practical utility has been impeded by issues such as low exciton dissociation efficiency and persistent photoconductivity. To address this challenge, an electron acceptor (TCNQ) was doped in pentacene as the donor, resulting in the formation of self-organized "embedded" heterojunctions within a single-crystal matrix. This unique organic architecture led to the development of high-performance OPTs, boasting an exceptional photoresponsivity of 1.1 x 10(4) A W-1 and a specific detectivity of 2.1 x 10(13) Jones. Importantly, the device exhibited a fast response time of about 92 mu s, maintaining a high photosensitivity exceeding 100, surpassing the capability of detectors constructed from pure organic single crystals. Notably, this "embedded" heterojunction design also enabled the superior infrared photoresponse at 1550 nm by narrowing the band gap. The enhanced performance is a result of the efficient separation of Frenkel excitons and collection of free charges driven by the built-in field at the "embedded" pentacene/TCNQ interface. Furthermore, these OPTs demonstrated versatility in capturing high-resolution images across multiple spectral bands, emphasizing the potential of molecule doping to enhance organic photodetector performance as a straightforward alternative.
Efficient hole extraction and dark current suppression in organic photodetectors enabled by atomic-layer-deposition of ultrathin Co<sub>3</sub>O<sub>4</sub> interlayers

Ke Lu,Yuanhong Gao,Zhenhui Wang,Xinwei Wang,Hong Meng

DOI: https://doi.org/10.1039/d3tc00866e

IF: 6.4

2023-01-01

Journal of Materials Chemistry C

Abstract:Transition-metal oxides are widely used to improve the power conversion efficiencies of organic or perovskite solar cells because their chemical and electronic properties can be tuned to enable charge exchange with a wide variety of semiconductor materials. In this work, the atomic-layer-deposition of ultrathin Co3O4 anode interlayers which are used as hole transporting/electron blocking layers in organic photodetectors is investigated. Incident light loss and carrier transport loss could be minimized due to the ultrashort transport path. It is found that the highly smooth Co3O4 interlayer with a deep valence band of 5.3 eV and a shallow conduction band of 1.6 eV effectively promotes photogenerated charge extraction and suppresses the electron injection under reverse bias, resulting in a significantly improved photodetection performance. At an optimal Co3O4 thickness of 1 nm, the dark current of the Co3O4 device is almost 1 order of magnitude lower than that of the PEDOT:PSS device. As a result, we have demonstrated a P3HT:PC61BM-based device with a low dark current of 2.5 nA cm(-2) and a high detectivity of 10(13) Jones at -1 V bias, which are higher than those of the commercial silicon-based photodiodes. Such ultrathin charge blocking layers are proved to be versatile in reducing the dark current for devices with NIR-absorbing NFA.
Insight into Trap State Dynamics for Exploiting Current Multiplication in Organic Photodetectors

Xiao Luo,Wenli Lv,Lili Du,Feiyu Zhao,Yingquan Peng,Ying Wang,Ying Tang

DOI: https://doi.org/10.1002/pssr.201600046

2016-01-01

Abstract:Trap‐induced current multiplication has received tremendous attention in organic photodetectors because it is not required for a pre‐amplifier circuit to read weak photocurrent signals. However, a plausible correlation between energy‐distin‐guishable trap states and device performance has not been established for guiding the device design, a task that remains a significant challenge. Here, we propose an ingenious strategy to demonstrate current multiplication by engineering an ultrathin fullerene (C60) film as hole trap or barrier layer, which illustrates trap‐state dynamics through systematical investigations on device current fluctuations in darkness and illumination conditions. The comparison of trap‐dependent performances between experimental and control devices clearly shows that the traps play a critical role in generating the multiplication effect. And shallow trap states are estimated to be more favorable for improving the device restorability. Thus, we anticipate that trap engineering, by selectively passivating deep traps whilst retaining shallow ones, will be a fruitful approach for further research, leading to high‐performance photodetectors with superior current multiplication and temporal response. (© 2013 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
Tunable Light Response Modulated by the Organic Interface Charge Transfer Effect

Di Xue,Qi Wang,Miao Xie,Weijie Gong,Yingying Zhang,Yao Yin,Yujia Wei,Jie Lu,Jidong Zhang,Steffen Duhm,Zi Wang,Lifeng Chi,Lizhen Huang

DOI: https://doi.org/10.1002/adom.202302091

IF: 9

2024-01-01

Advanced Optical Materials

Abstract:The combination of a donor (D) and an acceptor (A) is viewed as a promising approach to achieve high performance phototransistors, owing to their advantages in exciton dissociation and charge trapping. The electronic properties at the D-A interface can vary substantially with the choice of materials, and how to precisely control the interface properties to achieve a controllable light response behavior is still an open question. Herein, a series of D-A heterostructure is reported with varying electronic structures of the acceptor and demonstrate the ability to tune the performance and photocurrent decay behaviors. Two distinct types of charge transfer phenomena, ground state, and excited state charge transfer, are identified originating from the specific different energy level alignment and lead to the improved photoresponsivity up to 104 AW-1 and the significantly varied photosensitivity ranging from 102 to approaching 107. Furthermore, the distinct charge transfer scenarios elicit diverse temporal responses, encompassing both short-term synaptic behavior as well as persistent memory characteristics. These findings shed light on the importance of understanding and controlling charge transfer property for phototransistor performance and applications. The ability to modulate the temporal responses opens up new possibilities for designing devices with desired memory and synaptic functionalities. The adjustion of different D-A combination in organic heterostructure phototransistors is investigated comprehensively, realizing two distinct types of charge transfer effects, ground state, and excited state charge transfer. The electronic properties of the D-A interface is proven to controllably tune the photoresponse performance and photocurrent decay behaviors, providing a new path for designing and optimizing the devices of D-A organic heterostructures.image
Solution-Processed Organic-Inorganic Semiconductor Heterostructures for Advanced Hybrid Phototransistors

Dingwei Li,Yitong Chen,Yingjie Tang,Kun Liang,Huihui Ren,Fanfan Li,Yan Wang,Guolei Liu,Chunyan Song,Lei Meng,Bowen Zhu

DOI: https://doi.org/10.1021/acsaelm.2c01218

IF: 4.494

2023-01-01

ACS Applied Electronic Materials

Abstract:Organic/inorganic hybrid phototransistors are an emerging class of advanced optoelectronic devices. The separated organic high absorption layer and inorganic carrier transport layer endow hybrid phototransistors with remarkable sensing performance in a broad spectrum. The flexibility, ambient stability, and process compatibility of organic and metal oxide semiconductors also render them promising for large-area matrix integration and wearable applications. Moreover, extraordinary photoelectric behaviors, such as bidirectional photo responses and the versatility of in-sensor computing functions, including feature extraction and image enhancement, can be obtained by rational customization of the hybrid heterojunctions. In this Spotlight on Applications, we review the recent progress of organic/ inorganic hybrid phototransistors and their applications in photodetection, sensor arrays, flexible electronics, and in-sensor computing.
Suppressing Trap‐Assisted Nonradiative Recombination via Interface Modification for Achieving Efficient Organic Solar Cells

Zhongwei Ge,Jiawei Qiao,Jiali Song,Xiaoming Li,Jiawei Fu,Zhen Fu,Jiaxin Gao,Xian Tang,Lang Jiang,Zheng Tang,Guanghao Lu,Xiaotao Hao,Yanming Sun

DOI: https://doi.org/10.1002/aenm.202400203

IF: 27.8

2024-03-12

Advanced Energy Materials

Abstract:The PEDOT:PSS is deposited on the Me‐4PACz to form a composite hole‐transport interface layer. There is a built‐in potential inside the composite interlayer due to the change in work function, which is beneficial for hole collection and results in low nonradiative recombination rate. As a result, the high power conversion efficiency of 18.70% is achieved for binary all‐polymer solar cells. Trap states in organic solar cells (OSCs) can capture free charges, leading to a reduction in current density and significant energy loss. Since charge collection is primarily dependent on the interface layer, minimizing trap states at interfaces can effectively suppress energy losses, a topic that has been rarely explored. Herein, an interface strategy is proposed by combining Me‐4PACz and PEDOT:PSS to mitigate the trap‐assisted nonradiative recombination at the hole transport layer (HTL). OSCs based on the Me‐4PACz/PEDOT:PSS exhibit reduced trap densities and low energy losses compared to devices fabricated with a single‐layer HTL. This reduction can be attributed to a lower nonradiative recombination rate during hole transport at the interface. Changes in the work function of the two interlayers due to contact result in the existence of a built‐in potential inside the composite interlayer, promoting charge collection and reducing energy loss from charge recombination. Furthermore, the composite HTL interface induces vertical phase separation of active layer, leading to significant improvements of the fill factor for OSCs. As a result, high power conversion efficiencies (PCEs) of 18.70% and 19.02% are achieved for binary all‐polymer solar cells and polymer donor/small molecule acceptor solar cells, respectively.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Improving the Photomultiplication in Organic Photodetectors with Narrowband Response by Interfacial Engineering

Cheng Wang,Chi Zhang,Qi Chen,Liwei Chen

DOI: https://doi.org/10.6023/a21040181

2021-01-01

Acta Chimica Sinica

Abstract:Narrow-band response photodetectors are widely used in situations where specific light wavelengths need to be detected, such as communication. imaging, surveillance, etc. These detectors require not only the narrowest spectral response window, but also the highest external quantum efficiency (EQE) within the response window. Generally, the semiconductor photoactive layer in the photodetector will absorb the photons with energy greater than the band gap, and the spectral response window is usually wide, so it needs to combine with the filter of specific wavelength to achieve narrow band response. However, the introduction of filters, in addition to the increased cost, will inevitably lead to additional light reflection losses, which will significantly reduce EQE. When the film thickness of the heterojunction is up to inn, the narrow-band response near the band edge can be achieved without a filter. However, the problem brought by thick film is that the photocurrent also decreases, resulting in lower EQE (<30%) of the device. Although higher reverse bias increases the photocurrent and EQE, it also increases the collection probability of short-wave photogenerated carriers, thus damaging the narrow-band response. By greatly reducing the proportion of organic receptors and donors in the micron-size photoactive layer, the narrow-band response window of ca. 650 mu was achieved, and the EQE was up to ca. 53500% under -60 V reverse bias. This kind of organic photodetector achieving the photomultiplication mainly attributes to the trapped charges at the photoactive layer/electrode interface which will capture the photogenerated electrons (holes), and when the photogenerated electrons (holes) are collected, the electric neutral balance in the photoactive layer is broken. The trapped photogenerated electrons (holes) at the interface will cause the change of interface potential energy, which induces the interface band bending of the photoactive layer, and promotes the metal electrode to inject holes into the photoactive layer to maintain the neutral balance. Because the injection current is much higher than the photoelectric current, the superposition of the two can significantly increase EQE and even produce gain. However, the idea of obtaining higher EQE by further increasing the concentration of interfacial trapped electrons is difficult to be realized by increasing the proportion of receptors, which not only reduces EQE, but also increases the full width at half maximum (FWHM) of the response window and destroys the narrow-band response. In this work, the structure of ITO/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT)/poly(3-hexylthiophene) (P3HT)/[6,6]-phenyl-C61-isomethyl butyrate (PCBM)/aluminum (Al) has been prepared. By optimizing the thermal annealing time and PCBM concentration, the EQE at -60 V was successfully improved from 52946.8% to 68470.9%, which is the highest gain of narrow-band response organic photodetector so far, and the FWHM of ca. 28 tun remains unchanged. We used Nano-IR to confirm that EQE enhancement was attributed to thermal annealing induced diffusion of PCBM into P3HT, thus optimizing the electron trap concentration distribution at the interface between the active layer and the metal top electrode and enhancing carrier injection.

Weakened Charge Trapping at the Electrode/active Layer Interface in a Bulk Heterojunction-Based Organic Phototransistor for Quick Photomultiplication

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