Abstract:With the sub-bandgap optical excitation, thermal dynamics of holes among multiple levels in n-type GaN epilayers with different dopants of Si, Ge and C are investigated via measuring and modeling variable-temperature yellow luminescence (YL) band of the samples. In sharp contrast to the case of above-bandgap optical excitation, the variable-temperature YL band of all the studied GaN samples including unintentionally-doped sample exhibit unusual negative thermal quenching (NTQ) behavior, suggesting a possible physical mechanism, namely thermally induced migration of holes from shallower levels to the luminescent deep level. By considering the possible presence of multiple hole levels in the doped GaN samples, a phenomenological model is developed for the thermal transfer of holes among the multi-levels and the interpretation of the observed NTQ phenomenon of the YL band. Different activation energies of 347.9, 520.8 and 348.5 meV are obtained for the Ge-doped, high C-containing, and Si-doped GaN samples, respectively. The results reveal the existence of multiple hole defect levels in the n-type GaN. Possible microstructural origins causing these different hole levels are further argued. The study may shed some light on the nature of various defect complexes in the technologically important GaN epilayers. Combined microstructural and optical investigations need to be further done for elucidating various optically- and electrically-active defect complexes in GaN.

Various size images mapping technique to analyze trap-assisted non-radiative recombination mechanism using Cathodo- and Electro- Luminescences measurement in GaN-based LEDs

Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

Research Applications in III-nitrides with Cathodoluminescence Unitized Systems

Cathodoluminescence study of GaN-based film structures

Study of Defect Density and Aging Properties of GaN LEDs

Efficiency degradation induced by surface defects-assisted tunneling recombination in GaN/InGaN micro-light-emitting diodes

Cathodoluminescence Study of InGaN/GaN Thin Film

Theoretical Simulation and Experimental Verification of the Competition between Different Recombination Channels in GaN Semiconductor

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

An introduction on microscopic-hyperspectral imaging for GaN-based LED investigation

Size-dependent sidewall defect effect of GaN blue micro-LEDs by photoluminescence and fluorescence lifetime imaging

Thermally Activated Carriers Transfer Process For The Success Of Ingan/Gan Multi-Quantum Well Light Emitting Devices

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Inhomogeneous spatial distribution of non radiative recombination centers in GaN/InGaN nanowire heterostructures studied by cathodoluminescence

On the exciton-assisted radiative recombination via impurity trap levels in AlGaN deep ultraviolet light-emitting diodes

Measurement and analysis of photoluminescence in GaN