Expediting Photo‐Charging of Semiconductors Through a Bipolar Charge Storage Junction for Responsive Dark Photocatalysis

Bingzhen Yan,Qiushi Ruan,Shiqi Wang,Lingqiao Kong,Peigen Zhang,Hui Wang,ZhengMing Sun
DOI: https://doi.org/10.1002/adfm.202408895
IF: 19
2024-01-01
Advanced Functional Materials
Abstract:Photo-charging of semiconductors stores electrons for decoupled solar utilization, overcoming intermittent sunlight availability. However, the sluggish photo-charging process impedes responsive charge storage. Herein, a bipolar charge storage junction is demonstrated to expedite the photo-charging process within a renowned ionic-CN/Co3O4 configuration, benefiting from their mismatched photo-charging kinetics. Rapid photo-hole storage associated with structural evolution at geometrically dependent Co sites in Co3O4 improves sluggish electron storage for ionic-CN, while slow recovery of altered [CoO4] and [CoO6] structures delayed electron-hole recombination. By passivating individual atomic sites, rapid hole storage is attributed to synergistic contributions of tetrahedral Co2+ and octahedral Co3+ species. The bipolar charge storage junction is photo-charged at 0.86 A g(-1), rivaling the electrical charging rate in ion batteries. With 60 s photo-charging, the junction yields 0.27 mmol g(-1) of "dark" hydrogen, the benchmark for such a short photo-charging timeframe. This proof-of-concept design empowers the fast photo-charging ability of bipolar charge storage junctions, advancing responsive photo-charge storage for decoupled solar utilization.
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