A $W$-Band 0.18-Db RMS Gain and 0.97$^{\circ}$ Phase Error Active Phase Shifter in 28-Nm CMOS

Xianglong Zhang,Biao Deng,Liguo Sun,Dongfang Pan,Lin Cheng
DOI: https://doi.org/10.1109/lmwt.2024.3398796
2024-01-01
Abstract:A $W$ -band active phase shifter (PS) using two Gilbert-cell variable gain amplifiers (VGAs) with double-controlled digital-to-analog converters (DACs) and a high-order differential transformer-based quadrature generator (QG) is proposed, which is fabricated in 28-nm CMOS process. By controlling the two tail currents independently of the Gilbert cell, the proposed VGA can achieve a high resolution and a low-phase variation. The proposed high-order QG generates I/Q signals with low area cost and low insertion loss (IL) in a large frequency range of 86–96 GHz. The minimal root-mean-square (rms) gain error and phase error are measured to be 0.18 dB and 0.97 $^{\circ}$ for 64 states of the 6-bit 360 $^{\circ}$ phase. It shows $-$ 6 dB maximum gain with a variation below 1.1 dB including buffers and on-chip balun losses with 54 mW dc power consumption.
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