Influence of hole transport and thermal reactions in photo-driven water oxidation kinetics on crystalline TiO2

Pan Wang,Frances Houle,Gabriel Benitez
DOI: https://doi.org/10.26434/chemrxiv-2024-1xlvq
2024-08-28
Abstract:The requirement that photogenerated holes accumulate to drive the rate limiting step is thought to cause slow water oxidation by TiO2 to form O2, however detailed kinetics studies that directly establish the connection between photoabsorption and surface reactions have not been reported. In this work, we use physically realistic kinetics models of photo-driven water oxidation on TiO2 to evaluate how hole generation, bulk diffusion, surface mobility and reaction are coupled. The calculations show that hole formation and diffusion in the bulk crystal dominate O2 formation at low intensity, resulting in an apparent high order dependence of the O2 production rate on holes. As intensity increases, the water splitting reaction becomes nearly independent of it because of a buildup of intermediates that can only react thermally. Although it is believed that high hole mobility is a requirement for hole accumulation, a comparison of predicted to observed surface species indicates that immobilized holes dominate surface reactivity. The primary surface reaction sites are predicted to involve oxygen atoms that bridge two Ti atoms, supplied with OH formed by water dissociation on Ti sites. Because of the similarity among photocatalytic water oxidation mechanisms on diverse metal oxide semiconductors, which have generally low hole mobilities, the findings from this work may be relevant to them as well. If so, manipulations of hole mobility and accelerating the rate of thermal steps may provide a general pathway for improving water oxidation efficiency.
Chemistry
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is to understand the kinetic process of the light - driven water oxidation reaction on the surface of titanium dioxide (TiO₂), especially the interaction between hole transport and thermal reaction steps and their influence on the oxygen generation rate. Specifically, the author evaluates the coupling relationship among hole generation, bulk diffusion, surface mobility and reaction by constructing a physically reasonable kinetic model. It is found that at low light intensity, hole formation and bulk diffusion dominate the generation of oxygen, resulting in a high - order dependence of the oxygen production rate on holes. With the increase of light intensity, since the accumulation of intermediate products can only be carried out through thermal reactions, the water splitting reaction becomes almost independent of light intensity. The paper also explores whether high hole mobility is a necessary condition for hole accumulation, and by comparing the predicted results with the observed surface species, it is pointed out that fixed holes dominate in surface reactions. The main surface reaction sites are predicted to involve bridge oxygen atoms between two titanium atoms, which are supplied by hydroxyl groups formed by the dissociation of water on titanium sites. These findings may also have general significance for the photocatalytic water splitting mechanisms of other metal - oxide semiconductors with low hole mobility. If this is indeed the case, then manipulating hole mobility and accelerating the rate of thermal reaction steps may be a general way to improve water oxidation efficiency.