Abstract:This study investigates the stochastic behavior of random telegraph noise (RTN) in ferroelectric tunnel junctions (FTJs) considering the downscaling effect and its implications for neuromorphic systems. Through low-frequency noise spectroscopy and DC current fluctuation measurements of fabricated FTJs with varying top electrode areas, we quantified the stochasticity of the tunneling current as a function of applied voltage and device area. Our results indicate a significant increase in RTN-related stochasticity with decreasing FTJ area, resulting in higher RTN amplitude and a greater number of devices exhibiting RTN. Analysis of the capture and emission time constants of RTN shows that RTN arises from the interaction between the metal top electrode and a dominant trap site, located 4 nm deep from the top electrode, with a trap energy 1.8 eV below the conduction band of the HZO layer. To assess the impact on neuromorphic systems, we performed system-level simulations incorporating the measured device non-idealities (nonlinearity, limited dynamic range) and stochasticity (1/ f noise and RTN), and demonstrated that RTN can severely degrade system accuracy as device size decreases. To mitigate this problem, we proposed a limited dynamic range scheme that confines device operation to RTN-safe conductance levels, effectively minimizing accuracy degradation. This study clarifies the origin of the stochastic behavior of RTN in FTJs and also provides system-level solutions for high-density neuromorphic hardware systems affected by RTN.

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