Ultrabroadband Near-Infrared Zn3Ga2GeO8:Cr3+, Ni2+ Phosphor for PiG Pc-Led

Liwen Zheng,Huajun Wu,Kunpeng Zhao,Yuqi Liu,Sibo Wen,Guo-Hui Pan,Hao Wu,Zhendong Hao,Liangliang Zhang,Jiahua Zhang
DOI: https://doi.org/10.1002/adom.202401521
IF: 9
2024-01-01
Advanced Optical Materials
Abstract:Cr3+-activated broadband near-infrared (NIR) phosphors are studied extensively for application in phosphor converted light-emitting diode (pc-LED), a new light source for substance testing based on NIR spectroscopy. However, the emission of Cr3+ is mainly located in the NIR I region (700-1000 nm) and many substances show the characteristic spectroscopy in the NIR II region (1000-1700 nm). In this paper, dual-wavelength emission of NIR I and NIR II is realized in Cr3+ and Ni2+ codoped Zn3Ga2GeO8 (ZGGO) via energy transfer from NIR I emitting Cr3+ to NIR II emitting Ni2+. The photoluminescent properties of the doped ZGGO are studied as a function of doping concentration and the optimal concentrations of Cr3+ and Ni2+ are determined to be 0.04 and 0.003, respectively, with internal quantum efficiency (IQE) of 37.5%. The ZGGO:Cr3+, Ni2+ phosphor-in-glass (PiG), is prepared for fabricating PiG-converted ultrabroadband NIR LEDs to avoid serious reabsorption of the NIR II emission as in the pc-LED packaged using phosphor dispersed epoxy resin or silicone. The PiG pc-LED offers photoelectric efficiency of 4.3%@20 mA and NIR output power of 17 mW@200 mA and shows stable spectral distribution against drive current compared to pc-LED.
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