Synthesis and Luminescent Properties of a Novel Long-Afterglow Phosphor Bagd2al2ga2sio12: Ce3+

Wenchao Li,Yifan Leng,Fengqin Lai,Weixiong You
DOI: https://doi.org/10.1016/j.jallcom.2024.177028
IF: 6.2
2024-01-01
Journal of Alloys and Compounds
Abstract:With the widespread adoption of blue light chips, the demand for long afterglow phosphors excited by blue light is increasing. The current long afterglow phosphors excited by blue light exhibit relatively low afterglow brightness. However, the afterglow brightness can be effectively enhanced by regulating the activation energy of the host materials. In this study, a novel long afterglow phosphor with photoluminescence, BaY 1.95- x Gd x Al 2- Ga2SiO12: 2 SiO 12 : 0.05Ce3+(0 <= 3 + (0 <= x <= 1.95), was prepared using a high-temperature solid-state method. The activation energy between the 5d1 1 level and the conduction band (CB) in the material was regulated through the single substitution of Y With Gd (When x = 1.95, Y is completely substituted by Gd, forming BaGd2Al2Ga2SiO12: 2 Al 2 Ga 2 SiO 12 : Ce3+). 3 + ). As the concentration of Gd increases, the Stokes shift of the emission spectrum increases, and the activation energy between the 5d1 1 level and the CB decreases from 0.38 eV to 0.32 eV, making it easier for electrons to enter the conduction band, thereby enhancing the afterglow intensity. Furthermore, it was found that the substitution of Gd leads to a strengthening of the crystal field splitting of Ce3+ 3 + and a weakening of the centroid shift, which in turn causes a red shift in the spectrum. The AC-LED fabricated by combining BaGd1.95Al2Ga2SiO12: 1.95 Al 2 Ga 2 SiO 12 : 0.05Ce3+ 3 + long afterglow phosphor with a blue light chip effectively reduces flicker to 68.80 %.
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