Abstract:Switching characteristics of a Silicon Carbide MOSFET module are documented for the single‐pulse active gate driving approach and compared to the conventional gate drive case. EMI suppression benefits are quantified with the use of sensors for magnetic (H) and electric (E) fields. Active gate driving (AGD) is a promising concept for achieving high‐performance power transistor switching. This is particularly crucial for Silicon Carbide (SiC) MOSFETs since their inherently fast switching characteristics give rise to severe overshoots and oscillations which translate into increased levels of electromagnetic interference (EMI) emissions. In this paper, an AGD strategy using a single‐pulse applied during the switching transient is considered for a 1200 V 400 A SiC MOSFET module. The effect of single‐pulse timing, load current, and temperature on the switching performance is analyzed in detail. The radiated EMI reduction benefits are quantified by H‐field and E‐field probes. A conceptual closed‐loop AGD approach is presented and compared to open‐loop operation. For the transistor turn‐off case under full load current of 400 A, experimental results show that it is possible to reduce voltage overshoot by 43.3%, voltage and current oscillations by 69.7% and 52.2% respectively, and EMI by 76.6%, with a trade‐off in the switching energy by a relatively minor increase of 18.2%, compared to the conventional gate driving case. For the turn‐on case, current overshoot was reduced by 32.7%, EMI by 52%, voltage and current oscillations by 54.6% and 52.8%, respectively, with a penalty of 50.9% increase in the switching loss.

A Self-Regulating Active Gate Driver for SiC MOSFET Switching Loss Optimization

An Active Gate Driver Design to Reduce Voltage and Current Overshoots for SiC MOSFET Modules

A Novel Active Gate Driver with Auxiliary Gate Current Control Circuit for Improving Switching Performance of High-Power SiC MOSFET Modules

Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs

Switching Loss Reduction for 3.3Kv-750A Full-SiC MOSFET Module by Active Gate Driver

An Active Gate Driver for Improving Switching Performance of SiC MOSFET

Active Gate Drive Circuit with Auxiliary Drive Branch for SiC MOSFET

An Active Gate Driver for Dynamic Current Sharing of Paralleled SiC MOSFETs

SiC MOSFET Active Gate Drive Circuit Based on Switching Transient Feedback

Optimization Method of SiC MOSFET Switching Trajectory Based on Variable Current Drive

A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory

Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules

Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs

Digital Close-Loop Active Gate Driver for Static and Dynamic Current Sharing of Paralleled SiC MOSFETs

An Active Gate Driver for Suppressing the Current Oscillation of SiC MOSFET

An Integrated Gate Driver Based on SiC MOSFETs Adaptive Multi-Level Control Technique

An Optimized Switching Strategy Based on Gate Drivers with Variable Voltage to Improve the Switching Performance of SiC MOSFET Modules

Investigation into active‐gate‐driving performance and potential closed‐loop controller implementations for silicon carbide MOSFET modules

The Active Gate Driver Based on Hardware ClosedLoop Control for Crosstalk Suppression of SiC MOSFETs with Kelvin-Source Connection

SiC MOSFET Driver and Experiment Analysis

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack