High Q-Factor and Low Threshold Electrically Pumped Single-Mode Microlaser Based on a Single-Microwire Double-Heterojunction Device

Kai Xu,Peng Wan,Maosheng Liu,Kai Tang,Lijian Li,Tao He,Da Ning Shi,Caixia Kan,Mingming Jiang
DOI: https://doi.org/10.1021/acsphotonics.4c00667
IF: 7
2024-01-01
ACS Photonics
Abstract:The realization of micro/nanosized electrically pumped laser diodes, which show unique advantages including minimized footprint, ultralow threshold, energy-efficiency, and single-frequency characteristics, is hoped to feature as an indispensable unit in optoelectronic and photonic integrated circuits. Herein, we present a single-mode microlaser diode driven by electricity. This diode comprises an n-type AlGaN film coated with a SnO2 nanolayer, Pt nanoparticle-modified ZnO microwire via Ga impurity (PtNPs@ZnO:Ga MW), Pt/MgO bilayer, and a p-GaN substrate. The device demonstrates distinct double-heterojunction (n-n-p) characteristics, enabling it to lase at 387.3 nm. The line width is tremendously reduced to about 0.05 nm, yielding a laser's quality (Q)-factor approaching 7746. The carefully designed double heterostructure allows one to achieve superinjection of current, accompanied by the efficient confinement of injected charge carriers and photons in the MW cavity. As the laser is modified using PtNPs with specific dimensions, dynamic modulation of lasing modes ranging from multimode to single-mode operation is achieved. Such a methodical design and assembly of a double-heterojunction microlaser device could open up new technological avenues for constructing high-performance single-mode microlaser diodes upon an electrical pump. We expect that this research will advance the development of single-mode microlasers with the desired performance for robust integrated optoelectronic applications.
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