Abstract:The extreme ultraviolet (EUV) emission characteristics from Sn plasma for lithography produced by a pulse discharge CO2 laser was investigated under different conditions. Extreme ultraviolet spectral measurements were made throughout the wavelength region of 6.5 nm to 16.8 nm using a grazing incidence flat-field spectrograph coupled with an X-ray charge-coupled device camera for detection of time-integrated spectra. The dependence of spectral properties of the EUV emission on pulse duration, incidence pulse energy, and buffer gas pressure was investigated. The results show that the peak of EUV spectra was located at 13.5 nm. The intensity of EUV emission increased with increasing laser energy ranging from 30 mJ to 600 mJ in a nonlinear manner with saturation effect. The critical energy of incident pulse laser for the generation of EUV emission is near 30 mJ in our experiment. The highest conversion efficiency of 1.2% in producing 13.5 nm EUV light with 0.27 nm bandwidth was achieved at pump energy of 425 mJ. The EUV spectra from a plate target produced by laser pulse with full width at half maximum range from 50 ns to 120 ns were recorded and negligible differences in their spectral features noticed even though higher spectral intensity was observed by shorter pulse duration. The 2% in-band EUV intensity with 52 ns pulse duration was 1.6 times higher than that with 120 ns pulse duration due to the increase in laser intensity. It was also found that the detected EUV spectral intensity rapidly decreased with increasing buffer air pressure, and the EUV emission could be totally absorbed at the pressure of 200 Pa, while weak EUV emission could be still detected at the buffer He gas pressure of 7 X 10(4) Pa. The experimental results showed that the absorption coefficient of 13.5 nm light at air buffer gas pressure of 100 Pa was 3.0 m(-1), while the absorption coefficient was 0.96 m(-1) at the same He buffer gas pressure.

Liquid Tin Droplet Generator in Laser-produced Plasma Extreme Ultraviolet Source: A Review

Characteristics of Tin Droplet Target System for EUV Source Research

Emission Properties of Tin Droplets Laser-Produced-Plasma Light Sources

Experimental Study on Laser Produced Tin Droplet Plasma Extreme Ultraviolet Light Source

Laser-induced liquid tin discharge plasma and its EUV spectra

Behavior of Laser Assisted Tin Discharge EUV Emitting Plasma

Generation of the small tin droplet streams with a manipulable droplet spacing via the forced velocity perturbation

Physics of laser-driven tin plasma sources of EUV radiation for nanolithography

Modeling the hundreds-of-nanoseconds-long irradiation of tin droplets with a 2 extmu m-wavelength laser for future EUV lithography

A Laser-Produced Plasma Source Based on Thin-Film Gd Targets for Next-Generation Extreme Ultraviolet Lithography

Extreme Ultraviolet and Visible Emission Spectroscopic Characterization of CO2 Laser Produced Tin Plasma for Lithography

Influence of CO2-laser pulse parameters on 13.5 nm extreme ultraviolet emission features from irradiated liquid tin target

EUV and SXR sources based on discharge produced plasma

Diagnostics of tin droplet-based laser produced plasma by triple Langmuir probe

Euv Emission from Gas Discharges Produced Plasmas with Solid Tin As Target

Spectral Efficiency of Extreme Ultraviolet Emission from Co2 Laser-Produced Tin Plasma Using A Grazing Incidence Flat-Field Spectrograph

Angular Distribution of Ions and Extreme Ultraviolet Emission in Laser-Produced Tin Droplet Plasma

Extreme Ultraviolet Source Radiated from Pinch Plasma for Semiconductor Manufacturing

The Development of Laser-Produced Plasma EUV Light Source

Characteristics of Extreme Ultraviolet Emission from Tin Plasma Using Co2 Laser for Lithography

High-Power Euv Source for Lithography Using A Tin Target