Abstract:Abstract Solving the doping asymmetry issue in wide-gap semiconductors is a key difficulty and long-standing challenge for device applications. Here, a desorption-tailoring strategy is proposed to juggle the carrier concentration and transport. Specific to the p-doping issue in Al-rich AlGaN, self-assembled p-AlGaN superlattices with an average Al composition of over 50% are prepared by adopting this approach. The hole concentration as high as 8.1 × 10 18 cm −3 is thus realized at room temperature, which is attributed to the significant reduction of effective Mg activation energy to 17.5 meV through modulating the activating path, as well as the highlighted Mg surface-incorporation by an intentional interruption for desorption. More importantly, benefiting from the constant ultrathin barrier thickness of only three monolayers via this approach, vertical miniband transport of holes is verified in the p-AlGaN superlattices, greatly satisfying the demand of hole injection in device application. 280 nm deep-ultraviolet light-emitting diodes are then fabricated as a demo with the desorption-tailored Al-rich p-AlGaN superlattices, which exhibit a great improvement of the carrier injection efficiency and light extraction efficiency, thus leading to a 55.7% increase of the light output power. This study provides a solution for p-type doping of Al-rich AlGaN, and also sheds light on solving the doping asymmetry issue in general for wide-gap semiconductors.

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes (vol 49, pg 2049, 2024)

Strategically Constructed AlGaN Doping Barriers for Efficient Deep Ultraviolet Light-Emitting Diodes: Erratum

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Erratum: “spatially Resolved Study of Quantum Efficiency Droop in InGaN Light-Emitting Diodes,” [appl. Phys. Lett. 101, 252103 (2012)]

Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers

Performance Enhancement of AlGaN-based 365 Nm Ultraviolet Light-Emitting Diodes with a Band-Engineering Last Quantum Barrier.

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Performance Improvement of AlGaN-based Ultraviolet Light-Emitting Diodes by Amending Inverted-Y-shaped Barriers with Alternate Doped Si and Mg

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

High Performance of AlGaN Deep-Ultraviolet Light Emitting Diodes Due to Improved Vertical Carrier Transport by Delta-Accelerating Quantum Barriers

Performance enhancement of deep-ultraviolet LEDs by using quaternary AlInGaN polarization-engineered multiple-symmetrical-stair quantum barriers without electron blocking layer

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Suppression of Efficiency Droop by Inserting a Thin Undoped AlGaN Layer into Each Quantum Barrier in AlGaN-Based Deep-Ultraviolet Light-Emitting Diode

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Improved the AlGaN-Based Ultraviolet LEDs Performance With SuperLattice Structure Last Barrier Volume 10 , Number 4 , August 2018

Ultralow-threshold Thin-Film Lithium Niobate Optical Parametric Oscillator: Erratum

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes