Electrochemically Exfoliated Platinum Dichalcogenide Atomic Layers for High-Performance Air-Stable Infrared Photodetectors
Yaping Ma,Xiji Shao,Jing Li,Bowei Dong,Zhenliang Hu,Qiulan Zhou,Haomin Xu,Xiaoxu Zhao,Hanyan Fang,Xinzhe Li,Zejun Li,Jing Wu,Meng Zhao,Stephen John Pennycook,Chorng Haur Sow,Chengkuo Lee,Yu Lin Zhong,Junpeng Lu,Mengning Ding,Kedong Wang,Ying Li,Jiong Lu
DOI: https://doi.org/10.1021/acsami.0c20535
2021-02-11
Abstract:Platinum dichalcogenide (PtX<sub>2</sub>), an emergent group-10 transition metal dichalcogenide (TMD) has shown great potential in infrared photonic and optoelectronic applications due to its layer-dependent electronic structure with potentially suitable bandgap. However, a scalable synthesis of PtSe<sub>2</sub> and PtTe<sub>2</sub> atomic layers with controlled thickness still represents a major challenge in this field because of the strong interlayer interactions. Herein, we develop a facile cathodic exfoliation approach for the synthesis of solution-processable high-quality PtSe<sub>2</sub> and PtTe<sub>2</sub> atomic layers for high-performance infrared (IR) photodetection. As-exfoliated PtSe<sub>2</sub> and PtTe<sub>2</sub> bilayer exhibit an excellent photoresponsivity of 72 and 1620 mA W<sup>–1</sup> at zero gate voltage under a 1540 nm laser illumination, respectively, approximately several orders of magnitude higher than that of the majority of IR photodetectors based on graphene, TMDs, and black phosphorus. In addition, our PtSe<sub>2</sub> and PtTe<sub>2</sub> bilayer device also shows a decent specific detectivity of beyond 10<sup>9</sup> Jones with remarkable air-stability (>several months), outperforming the mechanically exfoliated counterparts under the laser illumination with a similar wavelength. Moreover, a high yield of PtSe<sub>2</sub> and PtTe<sub>2</sub> atomic layers dispersed in solution also allows for a facile fabrication of air-stable wafer-scale IR photodetector. This work demonstrates a new route for the synthesis of solution-processable layered materials with the narrow bandgap for the infrared optoelectronic applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c20535?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c20535</a>.Additional information includes methods; electrochemical exfoliation current as the function of the applied electrochemical voltage; statistics histograms of the thickness of as-exfoliated PtSe<sub>2</sub> flakes; AFM image and line profiles of the PtSe<sub>2</sub> flakes on SiO<sub>2</sub>/Si substrate; Raman spectra of few-layer and bulk PtSe<sub>2</sub> and PtTe<sub>2</sub>, <i>I</i><sub>ds</sub>–<i>V</i><sub>ds</sub> characteristics of the PtSe<sub>2</sub>-based device, absorption spectrum of the PtSe<sub>2</sub> flakes from UV–visible spectrophotometer, photocurrent, and absorption results under laser illumination with different wavelength ranging from 1500 to 1600 nm; line profiles of PtSe<sub>2</sub> and PtTe<sub>2</sub> flakes; stability of bilayer-PtSe<sub>2</sub> device in atmospheric condition; linear polarization angle dependent photocurrent, UV–vis spectrum of as-exfoliated PtTe<sub>2</sub> flakes dispersed in DMSO; <i>I</i><sub>ds</sub>–<i>V</i><sub>ds</sub> curves of the bilayer-PtTe<sub>2</sub> device; stability of bilayer-PtTe<sub>2</sub> device in atmospheric condition, photodetection performance of large-scale PtSe<sub>2</sub> and PtTe<sub>2</sub> devices, optoelectronic performance of PtTe<sub>2</sub>-based device; optoelectronic performance of PtTe<sub>2</sub>-based photodetector under the laser of various wavelength; a list of 2D materials based infrared photodetectors (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c20535/suppl_file/am0c20535_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology