Low Lattice Thermal Conductivity Induced by Interlayer Anharmonicity in P-Type BaFZnAs Compound with High Thermoelectric Performance

Xiaodong Li,Shuwei Tang,Shulin Bai,Da Wan,Jingyi Zhang,Zehui Yang,Wanrong Guo,Yuehui Chen
DOI: https://doi.org/10.1016/j.jallcom.2024.175488
IF: 6.2
2024-01-01
Journal of Alloys and Compounds
Abstract:Inspired by the excellent thermoelectric (TE) performance of ZrSiCuAs-type materials, the crystal structure, thermal and electronic transport mechanisms, and TE properties of the BaFZnAs compound are explored using first-principles calculations and Boltzmann transport theory. The BaFZnAs compound is an anisotropic material, with a direct bandgap of 1.20 eV determined by the Heyd-Scuseria-Ernzerhof (HSE06) functional. The [Zn 2 As 2 ] 2- layer within BaFZnAs compound forms carrier transport channel, which is beneficial for high power factor. The strong out-of-plane interlayer anharmonicity of the [Ba 2 F 2 ] 2 + and [Zn 2 As 2 ] 2- layers with weak interactions leads to a low lattice thermal conductivity (1.64 W/mK at 300 K) for the BaFZnAs compound. Based on the carrier relaxation time evaluated in the consideration of multiple carrier scattering rates and electronic transport parameters, the optimal ZT s of 1.44 and 2.06 are achieved for n-type and p-type BaFZnAs compounds at 900 K, associating with the corresponding ZT s of 2.10 (0.72) and 2.64 (0.51) along the a-axis and c-axis directions. Our present work not only offers multifaceted insights into the thermal and electronic transport properties of BaFZnAs compound, but also provides a new inspiration for further TE exploration of ZrSiCuAs-type materials.
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