Abstract:Spin-orbit torques (SOT) allow ultrafast, energy-efficient toggling of magnetization state by an in-plane charge current for applications such as magnetic random-access memory (SOT-MRAM). Tailoring the SOT vector comprising of antidamping (TAD) and fieldlike (TFL) torques could lead to faster, more reliable, and low-power SOT-MRAM. Here, we establish a method to quantify the longitudinal (TAD) and transverse (TFL) components of the SOT vector and its efficiency χAD and χFL, respectively, in nanoscale three-terminal SOT magnetic tunnel junctions (SOT-MTJ). Modulation of nucleation or switching field (BSF) for magnetization reversal by SOT effective fields (BSOT) leads to the modification of SOT-MTJ hysteresis loop behavior from which χAD and χFL are quantified. Surprisingly, in nanoscale W/CoFeB SOT-MTJ, we find χFL to be (i) twice as large as χAD and (ii) 6 times as large as χFL in micrometer-sized W/CoFeB Hall-bar devices. Our quantification is supported by micromagnetic and macrospin simulations which reproduce experimental SOT-MTJ Stoner-Wohlfarth astroid behavior only for χFL > χAD. Additionally, from the threshold current for current-induced magnetization switching with a transverse magnetic field, we show that in SOT-MTJ, TFL plays a more prominent role in magnetization dynamics than TAD. Due to SOT-MRAM geometry and nanodimensionality, the potential role of nonlocal spin Hall spin current accumulated adjacent to the SOT-MTJ in the mediation of TFL and χFL amplification merits to be explored.

Spin-Orbit Torque in Α-W-based Magnetic Tunnel Junction

Spin-Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions

Tuning nanosecond switching of spin-orbit torque driven magnetic tunnel junctions

Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction

Fast, low-current spin-orbit torque switching of magnetic tunnel junctions through atomic modifications of the free layer interfaces

Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque

Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque

Experimental Demonstration of Efficient Spin-Orbit Torque Switching of an MTJ with sub-100 ns Pulses

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

All-electrical manipulation of magnetization in magnetic tunnel junction via spin–orbit torque

Spin-Transfer-Induced Magnetization Switching In Magnetic Tunnel Junctions

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

Mechanism of field-like torque in spin-orbit torque switching of perpendicular magnetic tunnel junction

Spin-orbit Torque from a Ferromagnetic Metal

Field-Free Spin-Orbit Torque Magnetization Switching in a Perpendicularly Magnetized Semiconductor (Ga,Mn)As Single Layer

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Synergizing intrinsic symmetry breaking with spin–orbit torques for field-free perpendicular magnetic tunnel junction

Magnetization switching induced by spin–orbit torque from Co 2 MnGa magnetic Weyl semimetal thin films

Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions

Spin-orbit Torques in Perpendicularly Magnetized Ir22Mn78/Co20Fe60B20/MgO Multilayer

Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO