Planar Hall Effect in the Charge-Density-Wave Bi2Rh3Se2

Mingju Cai,Zheng Chen,Yang,Xiangde Zhu,Haoxiang Sun,Ankang Zhu,Xue Liu,Yuyan Han,Wenshuai Gao,Mingliang Tian
DOI: https://doi.org/10.1088/0256-307x/41/7/077303
2024-01-01
Chinese Physics Letters
Abstract:>We systematically investigate in-plane transport properties of ternary chalcogenide Bi 2 Rh 3 Se 2 .Upon rotating the magnetic field within the plane of the sample,one can distinctly detect the presence of both planar Hall resistance and anisotropic longitudinal resistance,and the phenomena appeared are precisely described by the theoretical formulation of the planar Hall effect (PHE).In addition,anisotropic orbital magnetoresistance rather than topologically nontrivial chiral anomalies dominates the PHE in Bi 2 Rh 3 Se 2 .The finding not only provides another platform for understanding the mechanism of PHE,but could also be beneficial for future planar Hall sensors based on two-dimensional materials.
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