Abstract:The advancement of integrated circuits (ICs) has been following Moore’s Law well since 1960s. For the sustaining of Moore’s Law, technologists in the microelectronics industry are, on one hand, trying to push lithography technology to the limit for making devices with smaller length scales. Extreme ultraviolet, e-beam, nanoimprint or other lithography technologies have been developed as candidate replacement technologies for the conventional optical lithography (Gwyn et al., 1998; Vieu et al., 2000; Chou et al., 1996). On the other hand, technologists are also exploring the third dimension for the 3D integration of chips (Baliga, 2004). Although the advancement of lithography technologies and 3D integration technology can keep the IC industry abreast of Moore’s Law for the next decade, the problems we will face at the end of that period are becoming visible. The emerging of nanowires/nanotubes as building blocks of ICs will bring fundamental changes to the future IC industry and offer continuance of Moore’s Law. Besides the applications in logic circuits, nanowires have very promising applications as sensing elements in highly sensitive bio/chemical/photon sensors and detectors. Nanowires are commonly grown by vapor-liquid-solid (VLS) process (Wagner & Ellis, 1964), vapor-solid (VS) process (Zhang et al., 1999), electrochemical deposition into nanoporous templates (Sander et al., 2002), and solution growth (Govender et al., 2002). In the past 20 years, nanowires of a diverse range of compositions have been produced at a relatively low cost with precisely controlled parameters including structure, size, defect, and doping. Nanowire devices such as field effect transistors (FETs) (Ju et al., 2007), single virus detector (Patolsky et al., 2004), pH sensor (Cui et al., 2001), gas sensors (Zhang et al., 2004), and photodetectors (Soci et al., 2007) have been demonstrated to show superior performance than their thin-film counterparts or even exhibit novel properties that have never been achieved by thin-film technology. However, most of the nanowire devices are limited to the demonstration of single device, not adequate for production on a large scale at low cost. Ultimately, cost and yield will decide whether nanowire devices find their way into market. Developing cost-effective means to integrate nanowires into working devices on large scales is essential for the prosperity of nanotechnology. In this chapter, we focus on progress toward nanowire device assembly technologies, which may benefit for the mass production of nanowire devices in the future. Generally, two strategies exist for the fabrication of devices from nanowires, namely, transfer pre-grown nanowires onto a surface with

Wire-Streaming Processors on 2-D Nanowire Fabrics

On-Chip Integration of Optical Nanofibers and Nanowires

Self-Healing Wire-Streaming Processors on 2-D Semiconductor Nanowire Fabrics

Simple and Cost-Effective Fabrication of Two-Dimensional Plastic Nanochannels from Silica Nanowire Templates

Fault-Tolerant Nanoscale Processors on Semiconductor Nanowire Grids.

Plasmon-driven Nanowire Actuators for On-Chip Manipulation

Multiple-Patterning Nanosphere Lithography for Fabricating Periodic Three-Dimensional Hierarchical Nanostructures.

Progress Toward Nanowire Device Assembly Technology

Combining Circuit Level and System Level Techniques for Defect-Tolerant Nanoscale Architectures

Silicon-Based Nanowire Mosfets: From Process And Device Physics To Simulation And Modeling

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Fabrication of Conducting Si Nanowire Arrays

Multi-terminal Ionic-Gated Low-Power Silicon Nanowire Synaptic Transistors with Dendritic Functions for Neuromorphic Systems.

3-D matrix nano-wire transistor fabrication on silicon substrate

A Wire delay scalable stream processor architecture

On-wire Lithography: Synthesis, Encoding and Biological Applications

Toward Scalable Fabrication of Atomic Wires in Silicon by Nanopatterning Self-Assembled Molecular Monolayers

The Synthesis of Stochastic Circuits for Nanoscale Computation.

Wafer-Scale Assembly of Semiconductor Nanowire Arrays by Contact Printing

Anisotropy Enhancing Vertically Aligned Silicon-Germanium Nanowire

3D Sidewall Integration of Ultrahigh‐Density Silicon Nanowires for Stacked Channel Electronics