Orientational Alignment of Semiconducting Carbon Nanotubes by the Parallel Steps of High-Index Copper Foils

Li,Jintao Zhao,Wanquan Chi,Wenyuan Wang,Lianduan Zeng,Siqi Zhu,Yunfei Li,Yahui Li,Qian Gong,Qi Chen,Xiao Wang,Song Qiu,Lixing Kang
DOI: https://doi.org/10.1016/j.carbon.2024.119329
IF: 10.9
2024-01-01
Carbon
Abstract:Numerous research efforts have focused on the deposition and morphology control of semiconducting singlewalled carbon nanotubes (s-SWCNTs) to exploit their extraordinary properties to fulfill in building nextgeneration electronics. However, it is difficult to realize s-SWCNT arrays at the controlled densities and alignments desired for high-performance devices. Here, we developed a novel approach to control the morphology and alignment of s-SWCNTs. Random s-SWCNT networks came into being well-aligned s-SWCNT arrays (within the alignment of 16.9 degrees ) along with the recrystallization of copper foils from polycrystalline to single-crystalline. Grain boundary migration induced motion and alignment of s-SWCNTs. In this way, high-quality s-SWCNTs were assembled into well-aligned CNT arrays on single-crystal high-index copper foils. Furthermore, theoretical calculations confirm that the strong binding energy between the s-SWCNTs and the copper edge steps leads to the orientational alignment of the s-SWCNTs on the copper surface.
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