Large Out-of-plane Piezoelectric Effect in a Janus Ferromagnetic Semiconductor Monolayer of CrOFBr

Qiuyue Ma,Guochun Yang,Busheng Wang,Yong Liu

DOI: https://doi.org/10.1103/physrevb.110.064430

2024-01-01

Abstract:The exploitation of piezoelectric ferromagnetism in two-dimensional (2D) materials with large out-of-plane piezoelectric response is motivated not only by technological applications but also scientific interest. In this study, the CrONM monolayer family (N = F, Cl; M = Br, Cl) was investigated using first-principles calculations, revealing that the Janus CrOFBr monolayer exhibits intrinsic ferromagnetic semiconductor behavior along with a significant out-of-plane piezoelectric effect. The calculated out-of-plane piezoelectric strain coefficients d31 and d32 are up to 1.21 and 0.63 pm/V, respectively. These values are greater than those of the majority of 2D materials. Furthermore, our findings demonstrate that applying tensile strain can enhance the out-of-plane piezoelectric response, leading to a respective 27% and 67% augmentation in the piezoelectric strain coefficients d31 and d32 compared to the unstrained configurations. This discovery holds great potential for propelling the field of nanoelectronics forward and facilitating the development of multifunctional semiconductor spintronic applications. Finally, by comparing d31 and d32 of the CrONM monolayer family (N = F, Cl; M = Br, Cl), we find that the magnitudes of d31 and d32 are correlated with the electronegativity difference ratio. These findings provide valuable insights for the design of 2D piezoelectric materials with enhanced vertical piezoelectric responses.