Elemental Superdoping of Graphene and Carbon Nanotubes.
Yuan Liu,Yuting Shen,Litao Sun,Jincheng Li,Chang Liu,Wencai Ren,Feng Li,Libo Gao,Jie Chen,Fuchi Liu,Yuanyuan Sun,Nujiang Tang,Hui-Ming Cheng,Youwei Du
DOI: https://doi.org/10.1038/ncomms10921
IF: 16.6
2016-01-01
Nature Communications
Abstract:Doping of low-dimensional graphitic materials, including graphene, graphene quantum dots and single-wall carbon nanotubes with nitrogen, sulfur or boron can significantly change their properties. We report that simple fluorination followed by annealing in a dopant source can superdope low-dimensional graphitic materials with a high level of N, S or B. The superdoping results in the following doping levels: (i) for graphene, 29.82, 17.55 and 10.79 at% for N-, S-and B-doping, respectively; (ii) for graphene quantum dots, 36.38 at% for N-doping; and (iii) for single-wall carbon nanotubes, 7.79 and 10.66 at% for N- and S-doping, respectively. As an example, the N-superdoping of graphene can greatly increase the capacitive energy storage, increase the efficiency of the oxygen reduction reaction and induce ferromagnetism. Furthermore, by changing the degree of fluorination, the doping level can be tuned over a wide range, which is important for optimizing the performance of doped low-dimensional graphitic materials.