Abstract:Silicon carbide (SiC) is one of the most promising wide-band gap semiconductors for future technological applications, with the potential for high-temperature and low-loss photonic devices. In this study, we investigated the ultrafast visible light all-optical switching in 6H-SiC, in which nondegenerate two-photon absorption appeared to be dominant. Using an 820 nm femtosecond laser beam as the modulation source, differential transmission on the order of 10% was achieved across the visible spectrum from 420 to 720 nm with the highest modulation depth reaching 27%. The dependence of the optical switching performance on wavelength, fluence, and polarization has been illustrated and analyzed in details. Our results provide an in-depth guideline for exploring SiC, of which the nonlinear optical properties could help to realize ultrafast all-optical switching devices in the visible regime.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsphotonics.1c00605.AFM topography image of the 6H-SiC sample; XRD graph of the 6H-SiC; Linear absorption spectrum of 6H-SiC; Long decay time of the free carrier effect; Transient differential transmission signal for different probe wavelengths; First pump propagation cycle inside the sample; Pulse widths and the spot sizes of the pump and the probe and the calculated instrument response functions; Reflectance change induced by the nonlinear effect in the optical switching of the 6H-SiC; Dependence of (−ΔT/T)max on the probe fluence; Dependence of (−ΔT/T) on the crystal orientation; Dependence of the fwhm on the pump fluence; Dependence of (−ΔT/T)max on the pump fluence for long pump and probe wavelengths (PDF)This article has not yet been cited by other publications.

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