First-principles Study on Electronic Structure of GaS/Mg(OH) 2 Heterostructure

Liu Jun-Ling,Bai Yu-Jie,Xu Ning,Zhang Qin-Fang
DOI: https://doi.org/10.7498/aps.73.20231979
IF: 0.906
2024-01-01
Acta Physica Sinica
Abstract:Constructing Type-II heterostructure is an effective scheme to tailor the electronic structure and improve the application performance. Motivated by recently successful syntheses of Mg(OH)2 and GaS monolayers, we investigate the stability, electronic, and optical properties of GaS/Mg(OH)2 heterostructure based on the density functional theory method. The calculated results show that GaS/Mg(OH)2 heterostructure is easily constructed due to its small lattice mismatch, negative binding energy and thermodynamic stability. Compared with monolayer materials, the band gap of GaS/Mg(OH)2 heterostructure is effectively reduced to be 2.021eV with Type-II band alignment, facilitating the spatial separation of photo-generated carriers where electrons are localized in the GaS and holes in the Mg(OH)2 monolayers, respectively. The built-in electric field induced by the interlayer charge transfer points from GaS to Mg(OH)2 monolayer, which can further improve the separation and suppress the recombination of electron-hole pairs. Under the biaxial strain, the valance band maximum and conduction band minimum of GaS/Mg(OH)2 heterostructure have different extent of relative shift in the downward direction, resulting in obvious change of band gap with the variable value to be about 0.5 eV. Furthermore, the band structure of GaS/Mg(OH)2 heterostructure can be transformed from indirect-to-direct band gap semiconductor under the tensile strain, while GaS/Mg(OH)2 heterostructure still maintains Type-II band alignment. Additionally, the band edge positions of GaS/Mg(OH)2 heterostructure can also be effectively tuned to straddle the redox potentials of water splitting at pH=0-7. The light absorption spectra show that GaS/Mg(OH)2 heterostructure has stronger light absorption ability than those of constituent monolayers. Especially, the light absorption has an obvious redshift phenomenon at a tensile strain of 3%. These findings suggest that GaS/Mg(OH)2 heterostructure has a wide application performance in the field of optoelectronics due to the tunable electronic properties, and also provide some valuable hints for future research.
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