Improved Dielectric and Energy Storage Capacity of PVDF Films Via Incorporating Wide-bandgap Silicon Oxide Decorated Graphene Oxide

Yongming Li,Zhen Wang,Dongmei Zhang,Yuchao Li,Yanhu Zhan,Weifang Han,Shuangshuang Wang,Yankai Li,Meng Xiao,Junwen Ren,Jun-Wei Zha
DOI: https://doi.org/10.1016/j.coco.2024.101923
IF: 8
2024-01-01
Composites Communications
Abstract:In this work, wide-bandgap silicon oxide decorated graphene oxide (GO@SiO2) hybrid was simply synthesized by in-situ hydrothermal method. The obtained GO@SiO2 as a filler was then introduced into poly(vinylidene fluoride) (PVDF) matrix to prepare GO@SiO2/PVDF composite dielectric films via solution casting method. A comprehensive dielectric and energy storage capacity of PVDF based dielectric films were simultaneously achieved, indicating synergistic enhancement of GO and SiO2. For the 0.2 wt% GO@SiO2/PVDF system, a relatively high dielectric constant (ɛ' = 12.9), an enhanced breakdown strength (404.9 kV·mm-1) and an improved discharged density (5.7 J·cm-3) were obtained, being 153%, 111% and 148% higher than those of neat PVDF, respectively. Such study provided a new strategy in obtaining flexible and large energy storage dielectric films.
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