Controllable Interface Engineering for the Preparation of High Rate Silicon Anode

Lei Wang,Ji-Jun Lu,Shao-Yuan Li,Feng-Shuo Xi,Zhong-Qiu Tong,Xiu-Hua Chen,Kui-Xian Wei,Wen-Hui Ma
DOI: https://doi.org/10.1002/adfm.202403574
IF: 19
2024-01-01
Advanced Functional Materials
Abstract:Silicon (Si) is considered to be the promising candidate anode for the next generation of high-energy-density batteries. However, the poor initial coulombic efficiency (ICE) and rate performance severely hinder its commercial development. Here, fully exploits the 2D structure of photovoltaic silicon waste (PV-WSi), combining with the advantage of controllable depositing layers offered by fluidized bed atomic layer deposition (FBALD), to simultaneously achieve high ICE and highrate performance of Si-based anodes. The characteristic of Li+ embedding vertically into the plane direction of the 2D sheet-like structure of PV-WSi helps shorten the diffusion distance, alleviating the pulverization problem caused by volume expansion. FBALD is utilized to controllably deposit Li2O (approximate to 1 nm) and TiO2 (approximate to 4 nm) layers to compensate for the loss of Li sources, further suppressing the volume expansion of Si and isolating the side reactions between Si and electrolyte. The prepared Si@Li2O@TiO2 demonstrates ultrahigh ICE (90.9%) and outstanding rate performance (>900 mAh g(-1) at a rate of 20 A g(-1)). Full cells with the Si@Li2O@TiO2 anode and LiFePO4 cathode deliver a stable capacity of 100 mAh g(-1) after 300 cycles at 0.5 C. This work provides new ideas for the development of high ICE, high-rate Si-based anodes based on low-cost photovoltaic waste.
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