Abstract:Organic light-emitting transistors (OLET) evolved from the fusion of the switching functionality of field-effect transistors (FET) with the light-emitting characteristics of organic light-emitting diode (OLED) that can simplify the active-matrix pixel device architecture and hence offer a promising pathway for future flat panel and flexible display technology. This review systematically analyzes the key device/molecular engineering tactics that assist in improving the electrode edge narrow emission to wide-area emission for display applications via three different topics, that is, narrow to wide-area emission, vertical architecture, and impact of high-κ dielectric on the device performance. Source–drain electrode engineering such as symmetric/asymmetric, planar/non-planar arrangement, semitransparent nature, multilayer approach comprising charge transport, and work function modification layers enable widening the emission zone. Vertical OLET architecture offers short channel lengths with a high aperture ratio, pixel type area emission, and stable light-emitting area. Transistors utilizing high-κ dielectric materials have assisted in lowering the operating voltage, enhancing luminance and air stability. The promising development in achieving wide-area emission provides a solid basis for constructing OLET research toward display applications; however, it relies on developing highly luminescent and fast charge transporting materials, suitable semitransparent source/drain electrodes, high-κ -dielectrics, and device architectural engineering.

Thin-film Transistor Technologies and Compensation Schemes for Active-Matrix LED Displays

Direct Design of Thin and High-Quality Direct-Lit LED Backlight Systems

Transistor Technologies and Pixel Circuit Design for Efficient Active-Matrix Organic Light-Emitting Diode Displays

Thin Film Transistor Array Based Active Matrix Flat Panel Displays—Past and Next Application in Immersive Displays

Flexible Thin-Film Transistor and Integration Strategies for Future Intelligent Displays

35‐4: Carbon Nanotube Thin‐Film Transistors for Active‐Matrix Micro‐LED Display – Device Performances, Bias Stress Stability and Compact Modeling

Mini-LED Backlight Technology Progress for Liquid Crystal Display

TFT Display Backplane Technology Based on Low-Temperature Polysilicon-Oxide Semiconductor Hybrid Integration

Letter: A New Compensation Pixel Circuit with Metal Oxide Thin‐film Transistors for Active‐matrix Organic Light‐emitting Diode Displays

54‐4: A 142‐in. IGZO‐TFT Glass‐Substrate AM MiniLED Tiled Display with External Compensation and Multilayer Demura Algorithm

Recent Developments in Flexible Organic Light‐Emitting Devices

A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

48‐4: LTPO Technology Development for Enhanced Display Performance: Image Sticking Phenomena, Circuit Operation and Backplane Process Integration

57‐2: High performance LTPS TFT Backplane Using Blue Laser Diode Annealing for Mini/Micro LED Display

Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors

Research Progress of Micro-LED Display Technology

P‐9.14: High transparent Active matrix Mini‐LED Full Color Display with IGZO TFT Backplane

3‐3: Invited Paper: Development of Organic TFT Technology for Active‐Matrix Display Backplane

En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review

Intrinsically flexible displays: key materials and devices

P‐21: Student Poster: Indium‐Gallium‐Zinc Oxide Thin‐Film Transistors for High‐Resolution Active‐Matrix Ferroelectric Liquid‐Crystal Displays