Abstract:Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS2) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS2, presenting a useful way to engineer the performance of MoS2. The mechanisms by which lattice defects affect the MoS2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS2 electronic structure. We fabricated single-layer MoS2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO2 as substrates and created defects in MoS2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface. Furthermore, the reduction state of CeO2 as an oxide substrate affects the interface charge transfer with MoS2. The irradiated MoS2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS2, demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS2 and show the importance of defect engineering in tuning the functionalities of MoS2 and other TMDs in electronics, optoelectronics, and electrochemistry.

A Molecular Coordination Strategy for Regulating the Interface of MoS2 Field Effect Transistors.

Atomistic insight into the oxidation of monolayer transition metal dichalcogenides: from structures to electronic properties

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Molecular Approach to Electrochemically Switchable Monolayer MoS2 Transistors

3d transition metal coordination on monolayer MoS2: a facile doping method to functionalize surfaces

Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

Thickness-Dependent Enhancement of Electronic Mobility of MoS2 Transistors Via Surface Functionalization

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

First Principles Study on Molecule Doping in MoS2 Monolayer

Modulating the Electronic Structure and In-Plane Activity of Two-Dimensional Transition Metal Dichalcogenide (mos2, TaS2, NbS2) Monolayers by Interfacial Engineering

Modulating Carrier Density and Transport Properties of Mos2 by Organic Molecular Doping and Defect Engineering

Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

Metastable Phase Control of Two-Dimensional Transition Metal Dichalcogenides on Metal Substrates

Increased Mobility and Reduced Hysteresis of MoS2 Field-Effect Transistors via Direct Surface Precipitation of CsPbBr3-Nanoclusters for Charge Transfer Doping

Selective Surface Modification and Layer Thinning of MoS2 Via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

Defect Passivation of Transition Metal Dichalcogenides Via a Charge Transfer Van Der Waals Interface.

Improving electron mobility in MoS 2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts

Asymmetric Chemical Functionalization of Top‐Contact Electrodes: Tuning the Charge Injection for High‐Performance MoS2 Field‐Effect Transistors and Schottky Diodes

Improving Electron Mobility in MoS2 Field-Effect Transistors by Optimizing the Interface Contact and Enhancing the Channel Conductance Through Local Structural Phase Transition