Few-layer Perovskite YMnO3 : A First-Principles Study

Yaping Meng,Fanhao Jia,Shaowen Xu,Heng Gao,Wenbin Ouyang,Yongchang Li,Yaning Cui,Yin Wang,Wei Ren
DOI: https://doi.org/10.1103/physrevb.109.104430
2024-01-01
Abstract:The successful preparation of freestanding oxide perovskites down to the few -layer limit inspires the development of two-dimensional multifunctional materials exhibiting both ferroelectric and ferromagnetic properties. In this study, we performed a comprehensive first -principles investigation on the few -layer perovskite YMnO 3 . Our findings reveal that its monolayer is an antiferromagnetic semiconductor, while other few layers are ferromagnetic half metals. All of them have an in -plane polarization with moderate energy barrier, although the "polarization" of metallic few layers may be not switchable. The distortion modes of few -layer YMnO 3 are different from its orthorhombic bulk counterpart which is paraelectric. The symmetry mode analysis reveals that the monolayer YMnO 3 displays proper ferroelectric behavior. We have investigated the polarization and magnetism of few -layer polar oxide perovskites and found that they strongly depend on the number of layers. These results will contribute to our current understanding of the properties of few -layer polar oxide perovskites.
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