Ba3SnGa10-xInxO20 (0 ≤ X ≤ 2): Site-Selective Doping, Band Structure Engineering and Photocatalytic Overall Water Splitting.

Weihua Li,Guangxiang Lu,Yanhong Ding,Rihong Cong,Tao Yang

DOI: https://doi.org/10.1039/d4dt00340c

IF: 4

2024-01-01

Dalton Transactions

Abstract:Developing new photocatalysts and deciphering the structure-property relationship are always the central topics in photocatalysis. In this study, a new photocatalyst Ba3SnGa10O20 containing two d(10) metal cations was prepared by a high temperature solid state reaction, and its crystal structure was investigated by Rietveld refinements of monochromatic X-ray powder diffraction data for the first time. There are 2 Ba, 4 metal cations and 6 O independent atoms in a unit cell. Sn4+ and Ga3+ co-occupy the octahedral cavities named M1 and M2 sites, and the other two metal sites are fully occupied by Ga3+. Rational In3+-to-Ga3+ substitution was performed to reduce the potential of the conduction band minimum and enhance the light absorption ability, which was indeed confirmed using UV-vis diffuse reflectance spectra and Mott-Schottky plots for Ba3SnGa10-xInxO20 (0 <= x <= 2). Interestingly, In3+ exhibits site selective doping at M1 and M2 sites exclusively. With the light absorption ability enhanced, the photocatalytic overall water splitting activity was also improved, i.e. the photocatalytic H-2 generation rate was 1.7(1) mu mol h(-1) for Ba3SnGa10O20, and the optimal catalyst Ba3SnGa8.5In1.5O20 loaded with 1.0 wt% Pd exhibited the H-2 generation rate of 27.5(4) mu mol h(-1) and the apparent quantum yield at 254 nm was estimated to be 2.28% in pure water.