Regulating the Metallic Cu–Ga Bond by S Vacancy for Improved Photocatalytic CO2 Reduction to C2H4
Junyan Wang,Chen Yang,Liang Mao,Xiaoyan Cai,Zikang Geng,Haoyu Zhang,Junying Zhang,Xin Tan,Jinhua Ye,Tao Yu
DOI: https://doi.org/10.1002/adfm.202213901
IF: 19
2023-04-22
Advanced Functional Materials
Abstract:The prepared 2D ultra‐thin CuGaS2/Ga2S3 can reduce the C–C coupling barrier to accelerate the photocatalytic reduction of CO2 to C2H4. A highly delocalized electron distribution intensity induced by S vacancy indicates that Cu and Ga adjacent to S vacancy form Cu–Ga metallic bond, which can stabilize critical intermediates (*CHOHCO) and steer the reaction toward C2H4 production. Artificial photosynthesis, which converts carbon dioxide into hydrocarbon fuels, is a promising strategy to overcome both global warming and energy crisis. Herein, the geometric position of Cu and Ga on ultra‐thin CuGaS2/Ga2S3 is oriented via a sulfur defect engineering, and the unprecedented C2H4 yield selectivity is ≈93.87% and yield is ≈335.67 μmol g−1 h−1. A highly delocalized electron distribution intensity induced by S vacancy indicates that Cu and Ga adjacent to S vacancy form Cu–Ga metallic bond, which accelerates the photocatalytic reduction of CO2 to C2H4. The stability of the crucial intermediates (*CHOHCO) is attributed to the upshift of the d‐band center of ultra‐thin CGS/GS. The C–C coupling barrier is intrinsically reduced by the dominant exposed Cu atoms on the 2D ultra‐thin CuGaS2/Ga2S3 in the process of photocatalytic CO2 reduction, which captures *CO molecules effectively. This study proposes a new strategy to design photocatalyst through defect engineering to adjust the selectivity of photocatalytic CO2 reduction.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology