Topological Flat Bands in Functionalized Arsenene Monolayers

Hongyan Zhao,Qingzhao Yao,Jiayong Zhang,Wenting Xu,Wei Li,Zhongqin Yang
DOI: https://doi.org/10.1103/physrevb.109.115417
IF: 3.7
2024-01-01
Physical Review B
Abstract:The discovery of two-dimensional nontrivial topological insulators has stimulated researchers' enthusiasm to exploit exotic topological quantum states in low dimensions. Here, we study the intriguing topological flat bands in arsenene monolayers decorated with H and transition metal magnetic atoms by using first-principles simulations and tight-binding models. Remarkably, the functionalized As monolayer can exhibit a time-reversal symmetry breaking Chern insulator (CI) with a unique topologically nontrivial flat band formed by an antibonding state of As ${p}_{z}$ and Cr ${d}_{{z}^{2}}$ orbitals. Under applying tensile strain, the As monolayer undergoes a quantum phase transition and behaves as a ferrovalley insulator (FVI). The topological quantum phase transition between CI and FVI is rationalized well by a five-orbital tight-binding model. Our work sheds light on manipulating the rare topological flat bands in layered two-dimensional quantum materials, showing opportunities for promising applications in strongly correlated topological electronics.
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